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| MJD112 MJD112 D-PAK for Surface Mount Applications * * * * * High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, " - I " Suffix) Electrically Similar to Popular TIP112 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 100 100 5 2 4 50 20 1.75 150 - 65 ~ 150 Units V V V A A mA W W C C R1 R2 E B Equivalent Circuit C R1 10k R2 0.6k Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICEO ICBO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 30mA, IB = 0 VCE = 50V, IB = 0 VCB = 100V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 2A, IB = 8mA IC = 4A, IB = 40mA IC = 4A, IB = 40mA VCE = 3A, IC = 2A VCE = 10V, IC = 0.75A VCB = 10V, IE = 0 f = 0.1MHz 25 100 500 1000 200 Min. 100 Max. 20 20 2 12K 2 3 4 2.8 V V V V MHz pF Units V A A mA VCE(sat) VBE(sat) VBE(on) fT Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test: PW300s, Duty Cycle2% (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD112 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 10 VCE = 3V IC = 250 IB hFE, DC CURRENT GAIN V BE(sat) 1 1000 VCE(sat) 100 0.1 10 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 VCC=30V IC=250IB Cob[pF], CAPACITANCE 100 tR,tD[s], TURN ON TIME 1 10 tR tD 1 0.1 1 10 100 0.1 0.01 0.1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10 10 VCC=30V IC=250IB 10 s 0 IC[A], COLLECTOR CURRENT tSTG,tF[s], TURN OFF TIME tSTG 1 DC 1 5m ms s 1 tF 0.1 0.1 0.01 0.01 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD112 Typical Characteristics (Continued) 25 PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD112 Package Demensions D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 (1.00) 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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