 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SGA-5389 Product Description The SGA-5389 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. SGA-5389Z Pb RoHS Compliant & Green Package DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier The matte tin finish on Sirenza's lead-free package utilizes a Product Features post annealing process to mitigate tin whisker formation and is * Now available in Lead Free, RoHS RoHS compliant per EU Directive 2002/95. This package is also Compliant, & Green Packaging manufactured with green molding compounds that contain no * High Gain : 15.4 dB at 1950 MHz antimony trioxide nor halogenated fire retardants. * Cascadable 50 Ohm Gain & Return Loss vs. Frequency 20 GAIN VD= 3.6 V, ID= 60 mA (Typ.) 0 -10 Return Loss (dB) * Operates From Single Supply * Low Thermal Resistance Package 15 Gain (dB) ORL Applications * * * * PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 10 5 0 0 1 2 3 4 Frequency (GHz) 5 6 IRL -20 -30 -40 Symbol G Parameter Small Signal G ain Units dB dB dB dBm dBm dBm dBm MHz dB dB dB V mA C/ W Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 14. 8 Typ. 16. 4 15. 4 14. 9 16. 3 15. 0 31. 5 28. 1 4500 Max. 18. 0 P1dB O I P3 Bandw idt h O ut put Pow er at 1dB Compression O ut put Third O rder I nt ercept Point Det ermined by Ret urn Loss (>10dB) I nput Ret urn Loss O ut put Ret urn Loss Noise Figure Device O perat ing Volt age Device O perat ing Current Thermal Resist ance (junct ion t o lead) Test Conditions: VS = 8 V RBIAS = 75 Ohms I RL O RL NF VD ID RTH, j-l 1950 MHz 1950 MHz 1950 MHz 3. 1 54 27. 6 15. 9 3. 5 3. 6 60 97 4. 1 66 ID = 60 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100617 Rev D SGA-5389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 500 Frequency Frequency (MHz) Frequency (MHz)(MHz) 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dBm dBm dB dB dB dB 16.9 16.7 31.8 16.7 16.4 31.5 16.3 22.2 23.4 20.8 3.3 15.4 28.1 15.0 27.6 15.9 21.6 2.8 14.9 26.6 14.1 21.6 14.4 21.7 4.1 13.7 37.5 27.8 20.5 24.0 26.2 20.6 3.4 14.1 12.7 21.1 VS = 8 V Test Conditions: VS = 8 V Test Conditions: RBIAS = 75 Ohms RBIAS = 39 Ohms = 60 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Noise Figure vs. Frequency VD=3.6 V, ID= 60 mA (Typ.) 7 6 Noise Figure (dB) 5 4 3 Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 120 mA 5V +16 dBm +150C -40C to +85C +150C Max. Storage Temp. TL=+25C 2 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 3.6 V, ID= 60 mA (Typ.) 40 35 OIP3 (dBm) P1dB vs. Frequency VD= 3.6 V, ID= 60 mA (Typ.) 20 18 P1dB (dBm) 16 14 12 30 25 TL=+25C 20 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 TL=+25C 10 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100617 Rev. D SGA-5389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 20 15 S21(dB) VD= 3.6 V, ID= 60 mA (Typ.) 0 VD= 3.6 V, ID= 60 mA (Typ.) -10 S11(dB) -20 10 5 -30 TL 0 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 +25C -40C +85C 6 0 1 2 3 4 Frequency (GHz) 5 6 |S | vs. Frequency 12 |S | vs. Frequency 22 -12 -15 VD= 3.6 V, ID= 60 mA (Typ.) 0 -10 S22(dB) -20 -30 VD= 3.6 V, ID= 60 mA (Typ.) S12(dB) -18 -21 TL -24 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 6 +25C -40C +85C 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100617 Rev. D SGA-5389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 4 1 SGA-5389 3 2 CB RF out Recommended Bias Resistor Values for ID=60mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 43 8V 75 10 V 110 12 V 150 VS RBIAS Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. A53 LC CD CB CB Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking 4 4 1 2, 4 GND A53 2 3 A53Z 3 2 1 2 3 1 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 1 3 Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 for Package Outline Drawing SGA-5389 SGA-5389Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100617 Rev. D |
Price & Availability of SGA-5389
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |