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| FMA3007 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: * * * * * * Cascode Configuration 10dB Gain pHEMT Technology AGC control with gate bias Input Return Loss <-15dB Output Return Loss <-10dB Preliminary Datasheet v2.1 FUNCTIONAL SCHEMATIC: VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3007 is a high performance 2-20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation and electronic warfare applications. Setting a second gate bias voltage between +1.0V and -1.0V can control the gain. Using an on chip diode for temperature monitoring the gain can be automatically controlled. VG TYPICAL APPLICATIONS: * * * Test Instrumentation Electronic Warfare Broadband Communication Infrastructure ELECTRICAL SPECIFICATIONS: PARAMETER Small Signal Gain Input Return Loss Output Return Loss Reverse Isolation Output Power at 1dB compression point Noise Figure Gate Voltage CONDITIONS (VDD=3.5V) 2-20GHz 2-20GHz 2-20GHz 2-20GHz 10GHz 18GHz 2-20GHz For Id=70mA MIN TYP 10 -15 -11 <-30 20 18 4.5 -0.37 MAX UNITS dB dB dB dB dBm dBm dB V PARAMETER Small Signal Gain Input Return Loss Output Return Loss Reverse Isolation Output Power at 1dB compression point Noise Figure Gate Voltage CONDITIONS (VDD=7V) 2-20GHz 2-20GHz 2-20GHz 2-20GHz 10GHz 18GHz 2-20GHz For Id=135mA MIN TYP 11.5 -15 -11 <-30 25 23 4.5 -0.26 MAX UNITS dB dB dB dB dBm dBm dB V Note: TAMBIENT = +25C, Z0 = 50 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3007 Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Gate Voltage Drain Voltage Total Power Dissipation Gain Compression Thermal Resistivity Operating Temp Storage Temp SYMBOL Pin (Table cell) VG1 VDD ABSOLUTE MAXIMUM +25dBm PAD REF A PAD NAME RF in VDP DESCRIPTION PIN COORDINATES (m) (140, 1153) (2097, 140) RF in (+Ve) Temperature Monitoring Diode -2V B +10V C VDN Ptot tbd (-Ve) Temperature Monitoring Diode (2321, 140) Comp tbd 0.66C/W -40C to +85C -55C to +150C D E F G H GND VG1 VG2 RF Out VDD GND Ground Gate Control Gain Control RF Out Drain Voltage Ground (2545, 140) (2769, 140) (2993, 140) (3004, 1141) (2540, 1650) (2792, 1650) JC Toper Tstor Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. I Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening PAD LAYOUT: I A H G B C D E F DIE SIZE (m) 3150 x 1780 DIE THICKNESS (m) 100 MIN. BOND PAD PITCH (m) 220 MIN. BOND PAD OPENING (m x m ) 120 x 120 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3007 Preliminary Datasheet v2.1 TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS: Note: Measurement Conditions VG1= -0.26V, ID= 130mA, VDD= 3.5V, VG2=+1V, TAMBIENT = 25C Gain 15 14 13 12 Input Return Loss (dB) -10 0 Input Return Loss Gain (dB) 11 10 9 8 7 6 5 -20 -30 -40 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 Output Return Loss 0 0 Reverse Isolation Output Return Loss (dB) Reverse Isolation (dB) -10 -20 -20 -40 -30 -40 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 -60 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 Output Power at P1dB Compression Point vs Freq 30 25 Output Power (dBm) 20 15 10 5 0 5 10 Frequency (GHz) 15 20 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3007 Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE FOR ON WAFER TEMPERATURE MEASUREMENTS: Note: Measurement Conditions VG1= -0.26V, VDD= 3.5V, VG2= +1V, TAMBIENT = -40C to +85C Gain 15 10 Input Return Loss 1.00 0 -40C +85C 1.00 10 Gain (dB) Input Return Loss (dB) -10 -20 5 1.00 -40C +85C 1.00 20 22 24 -30 0 2 4 6 8 10 12 14 16 Frequency (GHz) 18 -40 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 Output Return Loss 0 Reverse Isolation 0 1.00 -40C +85C 1.00 Output Return Loss (dB) Reverse Isolation (dB) -10 -20 -20 -40 -30 1.00 -40C +85C 1.00 -60 20 22 24 -40 2 4 6 8 10 12 14 16 Frequency (GHz) 18 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3007 Preliminary Datasheet v2.1 BIASING CIRCUIT SCHEMATIC: VDD VG2 100nF 100pF 100pF 100nF RF Output RF Input VG1 100nF 100pF ASSEMBLY DIAGRAM: To Evaluation Board via an 0402 Surface Mounted capacitor 100pF Capacitor 100pF Capacitors Note: Bond Wire length should be kept to a minimum To Evaluation Board via an 0402 Surface Mounted capacitor BILL OF MATERIALS: COMPONENT All RF tracks should be 50 characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100pF, 0402 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3007 Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. ORDERING INFORMATION: PART NUMBER FMA3007 (Gel-pak available on request) DESCRIPTION Die in Waffle-pack HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise data and large-signal models are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
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