View FMPA215107_732304.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
February 2007
FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
Features

General Description
The FMPA2151 is a dual frequency band power amplifier module designed for high performance WLAN applications in the 2.4 to 2.5GHz and the 4.90 to 5.9GHz frequency bands. The 16 pin 4 x 4 x 1.4 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. Only two external bias bypass capacitors are required. The two on-chip detectors provide power sensing capability. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Complimentary pin out available with part number FMPA2153 for MIMO applications.
Dual band operation in a single package design Integrated bias bypass >33dB modulated gain 2.4 to 2.5GHz band >33dB modulated gain 4.9 to 5.9GHz band 3.0% EVM at 19dBm modulated power out (2.4GHz) 3.5% EVM at 19dBm modulated power out (5.5GHz) 3.3V positive supply operation Separate integrated power detectors with 20dB dynamic range 16 pin 4 x 4 x 1.4mm leadless package Internally matched to 50 and DC blocked RF input/output Optimized for use in 802.11a/b/g applications
Device (4 x 4 x 1.4mm)
Z X 21 Y T T 51
Electrical Characteristics(1) 802.11g (2.4-2.5 GHz) OFDM Modulation
(with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage (PA ON 2.4) Mirror Supply Current (PA ON 2.4) Gain Average Packet Current @ +19dBm Pout EVM @ +19dBm Pout(2) Detector Output @ +19dBm Pout Detector Output @ +7dBm Pout POUT Spectral Mask Compliance(3)
Min.
2.4 3.0 2.6
Typ.
3.3 3.0 0.1 31 140 3.0 600 280 +20
Max.
2.5 3.6 3.6
Units
GHz V V mA dB mA % mV mV dBm
Notes: 1. VCC = 3.3V, PA ON 2.4 = 3.3V, TA = 25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMPA2151 Rev. E
FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
Electrical Characteristics(1) 802.11a OFDM Modulation
(with 176 s burst time, 100 s idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter
Frequency Collector Supply Voltage Mirror Supply Voltage (PA ON 5.5) Mirror Supply Current (PA ON 5.5) Gain Average Packet Current @ +19dBm Pout EVM @ +19dBm Pout(2) (4.9 to 5.9GHz) Detector Output @ +19dBm Pout Detector Output @ +7dBm Pout POUT Spectral Mask Compliance(3)
Min.
4.9 3.0 2.6
Typ.
3.3 3.0 0.1 33 240 3.5 600 375 +20
Max.
5.9 3.6 3.6
Units
GHz V V mA dB mA % mV mV dBm
Absolute Maximum Ratings(4)
Symbol
VCC ICC PA ON Pin Tcase Tstg
Parameter
Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature
Ratings
6 500 4 0 -40 to +85 -55 to +150
Units
V mA V dBm C C
Notes: 1. VCC = 3.3V, PA ON 5.5 = 3.3V, TA = 25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 4. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
2 FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
Schematic
PA ON 2.4 VCC1 2.4 VDET 2.4 1F
Pin
1 2 3
Description
GND RF IN 2.4 RF IN 5.5 GND PA ON 5.5 GND VCC2 5.5 VDET 5.5 GND RF OUT 5.5 RF OUT 2.4 GND VDET 2.4 VCC1 2.4 GND PA ON 2.4 CENTER GND
16 1
15
14
13 12
4 5
50 50 RF OUT 2.4 RF OUT 5.5
Z XYTT 2151
RF IN 2.4 RF IN 5.5
6 7 8 9 10 11
50 50
2 3 4 5
11 10 9
6
7
8
1F VDET 5.5 PA ON 5.5 VCC2 5.5
12 13 14 15 16 17
Package Outline
TOP VIEW 12 11 10 9
13 14 15 16
Z
XYTT 2151
1 2 3 4
8 7 6 5
Z X 21 Y T T 51
I/O 1 INDICATOR
1.40 Max. FRONT VIEW SEE DETAIL A 1 2 0.650 4.000.10 2.70 0.30
1.02 TYP. 0.30 TYP.
0.65 TYP.
0.10 TYP. 0.30 TYP.
0.650
2.70 4.000.10 BOTTOM VIEW DETAIL A TYP.
3 FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate 3 C/sec max
Peak tem p 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above li quidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up R ate 3 C/sec max
50 25
Time 25 C/sec t o peak tem p 6 mi nutes max
Ramp-Do wn Rate 6 C/sec max
Time (Sec)
4 FMPA2151 Rev. E
www.fairchildsemi.com
FMPA2151 2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLT TM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM
SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R)
UniFETTM VCXTM WireTM
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
5 FMPA2151 Rev. E
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FMPA215107

	To Download FMPA215107 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .