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 SPICE MODELS: MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT
MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER Features
* * * * * * *
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3)
K C D A
1 2 3
TO-220AB
L B M
Dim A B C D E G
Min 14.48 10.00 2.54 5.90 2.80 12.70 2.40 0.69 3.54 4.07 1.15 0.30 2.04
Max 15.75 10.40 3.43 6.40 3.93 14.27 2.70 0.93 3.78 4.82 1.39 0.50 2.79
Mechanical Data
* * * * * * *
Case: TO-220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: As Marked on Body Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 Marking: Type Number Weight: 2.24 grams (approx.)
J
E G N
H J K L
P
HH
Pin 1 Pin 2 Pin 3
M N P
Case
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 105C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Repetitive Peak Reverse Surge Current Forward Voltage Drop @ t 2.0ms @ IF = 5.0A, TC = 125C @ IF = 5.0A, TC = 25C @ IF = 10A, TC = 25C @ TC = 25C @ TC = 125C
@ TA = 25C unless otherwise specified
MBR Symbol 1030CT VRRM VRWM VR VR(RMS) IO IFSM IRRM VFM IRM Cj RqJC dV/dt Tj, TSTG 30 21
MBR 1035CT 35 24.5
MBR 1040CT 40 28
MBR 1045CT 45 31.5
MBR 1050CT 50 35
MBR 1060CT 60 42
Unit V V A A A
10 125 1.0 0.57 0.70 0.84 0.1 15 150 30 1000 -65 to +150 0.70 0.80 0.95
V mA pF K/W V/ms C
Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range
Notes:
1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30027 Rev. 2 - 2
1 of 2 www.diodes.com
MBR1030CT-MBR1060CT
a Diodes Incorporated
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
100
I(AV), AVERAGE FWD CURRENT (A)
8
MBR1030CT - MBR1045CT
10
6
4
MBR1050CT / MBR1060CT
1.0
2
0 0 50 100 150 TC, CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve
0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
1000
IFSM, PEAK FORWARD SURGE CURRENT (A)
300
200
150
Cj, JUNCTION CAPACITANCE (pF)
250
100
100
50
Tj = 25 C f = 1.0MHz
0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100
10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
Ordering Information
Device MBR10xxCT*
(Note 4) Packaging TO-220AB Shipping 50/Tube
* xx = Device type, e.g. MBR1045CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS30027 Rev. 2 - 2
2 of 2 www.diodes.com
MBR1030CT-MBR1060CT


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