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| MCR12DSM, MCR12DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com * * * * * * Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available SCRs 12 AMPERES RMS 600 - 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12DSM MCR12DSN On-State RMS Current (180 Conduction Angles; TC = 75C) Average On-State Current (180 Conduction Angles; TC = 75C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width 1.0 msec, TC = 75C) Forward Average Gate Power (t = 8.3 msec, TC = 75C) Forward Peak Gate Current (Pulse Width 1.0 msec, TC = 75C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 7.6 100 41 5.0 0.5 2.0 -40 to 110 -40 to 150 A A A A2sec W W G A C C Y WW R12DSx 1 2 3 Value Unit V 12 3 4 DPAK CASE 369C STYLE 4 MARKING DIAGRAMS YWW R1 2DSxG 4 DPAK-3 CASE 369D STYLE 4 YWW R1 2DSxG = Year = Work Week = Device Code x= M or N = Pb-Free Package PIN ASSIGNMENT 1 2 3 4 Cathode Anode Gate Anode Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 November, 2005 - Rev. 4 Publication Order Number: MCR12DSM/D MCR12DSM, MCR12DSN THERMAL CHARACTERISTICS Characteristic Thermal Resistance,- Junction-to-Case Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol RqJC RqJA RqJA TL Max 2.2 88 80 260 Unit C/W C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristics OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 4) (VAK = Rated VDRM or VRRM; RGK = 1.0 KW) TJ = 25C TJ = 110C ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage, (IGR = 10 mA) Peak Reverse Gate Blocking Current, (VGR = 10 V) Peak Forward On-State Voltage (Note 5), (ITM = 20 A) Gate Trigger Current (Continuous dc) (Note 6) (VD = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (Note 6) (VD = 12 V, RL = 100 W) TJ = 25C TJ = -40C VGT TJ = 25C TJ = -40C TJ = 110C IH TJ = 25C TJ = -40C IL TJ = 25C TJ = -40C tgt - 2.0 5.0 0.5 - 1.0 - 6.0 10 ms 0.5 - 1.0 - 6.0 10 mA 0.45 - 0.2 0.65 - - 1.0 1.5 - mA VGRM IGRM VTM IGT 5.0 - 12 - 200 300 V 10 - - 12.5 - 1.3 18 1.2 1.9 V mA V mA IDRM, IRRM mA - - - - 10 500 Symbol Min Typ Max Unit Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) Latching Current (VD = 12 V, IG = 2.0 mA) Turn-On Time (Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110C) dv/dt 2.0 10 - V/ms 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. 4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%. 6. RGK current not included in measurement. http://onsemi.com 2 MCR12DSM, MCR12DSN Voltage Current Characteristic of SCR + Current Anode + VTM Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - IRRM at VRRM on state IH + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 110 105 100 95 90 85 80 75 70 0 a dc 180 a = 30 3.0 4.0 60 5.0 90 6.0 120 7.0 8.0 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 16 14 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) a 90 60 dc 120 180 a = Conduction Angle a = 30 a = Conduction Angle 1.0 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation http://onsemi.com 3 MCR12DSM, MCR12DSN I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL @ TJ = 25C MAXIMUM @ TJ = 110C 10 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) MAXIMUM @ TJ = 25C 1.0 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 1000 I GT, GATE TRIGGER CURRENT (m A) 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.1 -10 5.0 20 35 50 65 80 95 110 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) RGK = 1.0 KW 100 10 GATE OPEN 1.0 -40 -25 Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 10 RGK = 1.0 KW IH , HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 10 RGK = 1.0 KW 1.0 1.0 0.1 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) 0.1 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature http://onsemi.com 4 Figure 8. Typical Latching Current versus Junction Temperature MCR12DSM, MCR12DSN 10 TJ = 25C IH, HOLDING CURRENT (mA) 8.0 STATIC dv/dt (V/m s) 100 70C 90C TJ = 110C 10 1000 6.0 IGT = 25 mA 4.0 IGT = 10 mA 2.0 0 100 1.0 1000 RGK, GATE-CATHODE RESISTANCE (OHMS) 10 K 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 Figure 9. Holding Current versus Gate-Cathode Resistance Figure 10. Exponential Static dv/dt versus Gate-Cathode Resistance and Junction Temperature 1000 1000 TJ = 110C 400 V STATIC dv/dt (V/ m s) 100 STATIC dv/dt (V/ m s) VD = 800 V TJ = 110C 100 IGT = 25 mA 600 V VPK = 800 V IGT = 10 mA 10 10 1.0 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 1.0 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 Figure 11. Exponential Static dv/dt versus Gate-Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus Gate-Cathode Resistance and Gate Trigger Current Sensitivity ORDERING INFORMATION Device MCR12DSMT4 MCR12DSMT4G MCR12DSN-001 MCR12DSN-001G MCR12DSNT4 MCR12DSNT4G Package Type DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) Package 369C 369C 369D 369D 369C 369C Shipping 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MCR12DSM, MCR12DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MCR12DSM, MCR12DSN PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MCR12DSM/D |
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