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MCR218-2, MCR218-4, MCR218-6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
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* Glass-Passivated Junctions * Blocking Voltage to 400 Volts * TO-220 Construction - Low Thermal Resistance, High Heat *
Dissipation and Durability Pb-Free Packages are Available*
SCRs 8 AMPERES RMS 50 thru 400 VOLTS
G A C
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = *40 to 125C, Gate Open) MCR218-2 MCR218-4 MCR218-6 On-State RMS Current (180 Conduction Angles; TC = 70C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 70C) Forward Average Gate Power (t = 8.3 ms, TC = 70C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 70C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 400 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 8.0 100 26 5.0 0.5 2.0 -40 to +125 -40 to +150 A 1 A A2s W W A C C A Y WW MCR218x G AKA 2 3 TO-220AB CASE 221A-07 STYLE 3 Value Unit V 4
MARKING DIAGRAM
AY WW MCR218x-G AKA
= Assembly Location = Year = Work Week = Device Code x = 2, 4 or 6 = Pb-Free Package = Diode Polarity
ORDERING INFORMATION
Device MCR218-2 MCR218-2G MCR218-4 MCR218-4G MCR218-6 MCR218-6G Package TO220AB TO220AB (Pb-Free) TO220AB TO220AB (Pb-Free) TO220AB TO220AB (Pb-Free) Shipping 500 Units/Bulk 500 Units/Bulk 500 Units/Bulk 500 Units/Bulk 500 Units/Bulk 500 Units/Bulk
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
1
November, 2005 - Rev. 4
Publication Order Number: MCR218/D
MCR218-2, MCR218-4, MCR218-6
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RqJC TL Max 2.0 260 Unit C/W C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current TJ = 25C (VAK = Rated VDRM or VRRM, Gate Open) TJ = 125C ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 16 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) Gate Non-Trigger Voltage (Rated 12 V, RL = 100 Ohms, TJ = 125C) Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) 2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle 2%. dv/dt - 100 - V/ms VTM IGT VGT VGD IH - - - 0.2 - 1.5 10 - - 16 1.8 25 1.5 - 30 V mA V V mA IDRM, IRRM - - - - 10 2.0 mA mA Symbol Min Typ Max Unit
Voltage Current Characteristic of SCR
+ Current
Anode + VTM
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - IRRM at VRRM on state IH
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
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2
MCR218-2, MCR218-4, MCR218-6
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) 125 15
115
= CONDUCTION ANGLE
12
= Conduction Angle 120 180 60 = 30 90 dc
105
9.0
95 dc = 30 0 1 2
6.0
85 75 60 3 90 120 4 180 5 6 7
3.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVG. ON-STATE CURRENT (AMPS) 7.0 8.0
8
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
Figure 2. On-State Power Dissipation
I GT , NORMALIZED GATE TRIGGER CURRENT (mA)
2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 0.4 0.3 -60 -40 -20 0 20 40 60 80 100 120 140
V GT , NORMALIZED GATE TRIGGER VOLTAGE
3.0
1.3 1.2
VD = 12 Vdc 1.0 0.9 0.7 0.5 0.4 0.3 -60 -40 -20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical Gate Trigger Current versus Temperature
Figure 4. Typical Gate Trigger Voltage versus Temperature
I H , NORMALIZED HOLDING CURRENT (mA)
4.0 3.0 2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 0.4 -60 -40 -20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Holding Current versus Temperature
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3
MCR218-2, MCR218-4, MCR218-6
PACKAGE DIMENSIONS
TO-220AB CASE 221A-07 ISSUE AA
-T- B F C
SEATING PLANE
T
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
4
Q
123
A U K
H Z L V G D N J R
STYLE 3: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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4
MCR218/D

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