View MJF1503006_744479.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors
For Isolated Package Applications
Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Features http://onsemi.com
* * * * * * * *
Electrically Similar to the Popular MJE15030 and MJE15031 150 VCEO(sus) 8 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain-Bandwidth Product - fT = 30 MHz (Min) @ IC = 500 mAdc UL Recognized, File #E69369, to 3500 VRMS Isolation Pb-Free Packages are Available*
1 Rating Symbol VCEO VCB VEB Value 150 150 5 Unit Vdc Vdc Vdc
COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS
MARKING DIAGRAM
IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III I I I I I I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III I III I I I IIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIIII III I I I I I I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage RMS Isolation Voltage (Note 1) Test No. 1 Per Figure 11 Test No. 2 Per Figure 12 Test No. 3 Per Figure 13 (for 1 sec, R.H. < 30%, TA = 25_C) Collector Current Base Current - Continuous - Peak VISOL 4500 3500 1500 8 16 2 VRMS IC IB Adc Adc Total Power Dissipation (Note 2) @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD 36 0.016 W W/_C W W/_C _C 2.0 0.016 Operating and Storage Temperature Range Characteristic TJ, Tstg -65 to +150 Max 3.5
MAXIMUM RATINGS
2
3
TO-220 FULLPACK CASE 221D STYLE 2
MJF1503xG AYWW
MJF1503x = Specific Device Code x = 0 or 1 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week
ORDERING INFORMATION
Device MJF15030 MJF15030G MJF15031 MJF15031G Package TO-220 FULLPACK Shipping 50 Units/Rail
THERMAL CHARACTERISTICS
Symbol RqJA RqJC
Unit
Thermal Resistance, Junction-to-Ambient
62.5
_C/W _C/W
Thermal Resistance, Junction-to-Case (Note 2)
TO-220 FULLPACK 50 Units/Rail (Pb-Free) TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) 50 Units/Rail 50 Units/Rail
Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. 2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
April, 2006 - Rev. 5
1
Publication Order Number: MJF15030/D
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Current Gain - Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Base-Emitter On Voltage (IC = 1 Adc, VCE = 2 Vdc)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc)
DC Current Gain Linearity y (VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)
DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 2 Vdc) (IC = 3 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCB = 150 Vdc, IE = 0)
Collector Cutoff Current (VCE = 150 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0)
0.01 0.1
0.02
0.03
0.05
0.3
0.5
0.1
0.2
1
0.2 0.3
0.5
1
Characteristic
SINGLE PULSE RqJC(t) = r(t) RqJC TJ(pk) - TC = P(pk) RqJC(t)
2
MJF15030 (NPN), MJF15031 (PNP)
3
5
Figure 1. Thermal Response
10
http://onsemi.com
20 30 50 t, TIME (ms) 100 VCEO(sus) Symbol VCE(sat) VBE(on) 200 300 ICBO ICEO IEBO hFE hFE fT 500 Min 150 30 40 40 40 20 - - - - - 1K Typ 2 3 2K 3K Max 0.5 10 10 10 - 1 - - - - - 5K mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc - 10K
2
MJF15030 (NPN), MJF15031 (PNP)
20 IC, COLLECTOR CURRENT (AMP) 10 5 3 2 1 5 ms dc 100 ms
0.5 0.3 0.2 0.1
0.05 0.03 0.02 2 3
WIREBOND LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT @ TC = 25C 50 70 100 150 200 5 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 2 and 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 2. Forward Bias Safe Operating Area
8 IC, COLLECTOR CURRENT (AMP) 1000 500 C, CAPACITANCE (pF) 200 100 50 30 20 10 1.5 3 5 7 10 30 50 VR, REVERSE VOLTAGE (VOLTS) Cob (NPN) Cib (NPN) Cib (PNP)
5
Cob (PNP)
3 2 1 0 0 IC/IB = 10 TC = 25C
VBE(off) = 9 V
5V 3V 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100 150
Figure 3. Reverse Bias Switching Safe Operating Area
BANDWIDTH PRODUCT (MHz) 100 hfe , SMALL-SIGNAL CURRENT GAIN 100 90
Figure 4. Capacitances
(PNP)
50 30 PNP 20 VCE = 10 V IC = 0.5 A TC = 25C NPN
60 50
(NPN)
10
f T, CURRENT GAIN
20 10 0 0.1 0.2 0.5 1 2 5 10
5 0.5
0.7
1
2
3
5
7
10
f, FREQUENCY (MHz)
IC, COLLECTOR CURRENT (AMP)
Figure 5. Small-Signal Current Gain
Figure 6. Current Gain -- Bandwidth Product
http://onsemi.com
3
MJF15030 (NPN), MJF15031 (PNP)
DC CURRENT GAIN
1K 500 hFE, DC CURRENT GAIN 200 150 100 70 50 30 20 10 0.1 TJ = 150C TJ = 25C TJ = -55C VCE = 2 V hFE, DC CURRENT GAIN 1K 500 TJ = 150C 200 100 50 20 10 0.1 TJ = 25C TJ = -55C VCE = 2 V
0.2
0.5
1
2
5
10
0.2
IC, COLLECTOR CURRENT (AMP)
0.5 1 2 IC, COLLECTOR CURRENT (AMP)
5
10
Figure 7a. MJF15030 NPN
Figure 7b. MJF15031 PNP
"ON" VOLTAGE
TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.4 1.2 1 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2 V VCE(sat) @ IC/IB = 20 0.2 0.5 1 2 1.8
1 0.8 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 20 VBE(sat) @ IC/IB = 20 IC/IB = 10 1 2 5 10
0.4 0.2 0.1 IC/IB = 10 5 10 0 0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8a. MJF15030 NPN
Figure 8b. MJF15031 PNP
1 0.5 VCC = 80 V IC/IB = 10 TJ = 25C td (NPN, PNP) t, TIME ( s) tr (PNP)
10 5 3 2 ts (PNP) 1 0.5 tr (NPN) 0.2 0.1 0.1 tf (NPN) 0.2 0.3 0.5 1 2 5 10 tf (PNP) VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C
t, TIME ( s)
0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1 2
5
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn-On Times
Figure 10. Turn-Off Times
http://onsemi.com
4
MJF15030 (NPN), MJF15031 (PNP)
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.099" MIN LEADS
0.099" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 11. Clip Mounting Position for Isolation Test Number 1
Figure 12. Clip Mounting Position for Isolation Test Number 2
Figure 13. Screw Mounting Position for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 14. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
5
MJF15030 (NPN), MJF15031 (PNP)
PACKAGE DIMENSIONS
TO-220 FULLPAK CASE 221D-03 ISSUE G
-T- F Q A
123
SEATING PLANE
-B-
C S U
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56
H K
-Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
6
MJF15030/D

▲Up To Search▲

Price & Availability of MJF1503006

	To Download MJF1503006 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .