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| STS12NH3LL N-CHANNEL 30 V - 0.008 - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETTM MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STS12NH3LL s s s s s Figure 1: Package RDS(on) < 0.0105 ID 12 A VDSS 30 V TYPICAL RDS(on) = 0.008 @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE LOW INPUT CAPACITANCE SO-8 DESCRIPTION The STS12NH3LL is based on the latest generation of ST's proprietary "STripFETTM" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications. Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH FREQUENCY DC-DC CONVERTERS FOR COMPUTER AND TELECOM Table 2: Order Codes Part Number STS12NH3LL Marking S12NH3LL Package SO-8 Packaging TAPE & REEL Rev. 3 July 2004 This is preliminary information on a new product now in development. Details are subject to change without notice 1/7 STS12NH3LL Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) Ptot Tstg Tj Parameter Drain-source Voltage (VGS= 0) Drain-gate Voltage (RGS= 20 k) Gate-source Voltage Drain Current (continuous) at TC= 25C Drain Current (continuous) at TC= 100C Drain Current (pulsed) Total Dissipation at TC= 25C Storage Temperature Max. Operating Junction Temperature Value 30 30 16 12 7.5 48 2.5 - 55 to 150 Unit V V V A A A W C ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-amb (#) Thermal Resistance Junction-ambient 50 C/W (#) When Mounted on 1 inch FR-4 board, 2 oz Cu (t 10 sec.) ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 16 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 6 A 1 0.008 0.010 0.0105 0.013 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 6: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= 15V, ID= 6 A VDS= 25V, f= 1 MHz, VGS= 0 Min. Typ. TBD 965 285 38 Max. Unit S pF pF pF 2/7 STS12NH3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD= 15 V, ID= 6 A RG = 4.7, VGS = 4.5V (see Figure 3) VDD= 15V, ID= 12 A, VGS= 4.5 V (see Figure 5) Min. Typ. 15 32 9 3.7 3 12 Max. Unit ns ns nC nC nC Table 8: Switching Off Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD= 15 V, ID= 6 A, RG= 4.7, VGS= 4.5 V (see Figure 3) Min. Typ. 18 8.5 Max. Unit ns ns Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s VDD = 20V, Tj = 150C (see Figure 4) 24 17.4 1.45 Test Conditions Min. Typ. Max. 12 48 1.3 Unit A A V ns nC A 3/7 STS12NH3LL Figure 3: Switching Times Test Circuit For Resistive Load Figure 5: Gate Charge Test Circuit Figure 4: Test Circuit For Diode Recovery Times 4/7 STS12NH3LL SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 5/7 STS12NH3LL Table 10: Revision History Date 21-July-2004 Revision 3 New stylesheet Description of Changes The Rds(on) value changed (see table5). 6/7 STS12NH3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7 |
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