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| AO4410 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4410 is Pb-free (meets ROHS & Sony 259 specifications). AO4410L is a Green Product ordering option. AO4410 and AO4410L are electrically identical. Features VDS (V) = 30V ID = 18A (V GS = 10V) RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 6.2m (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum 30 12 18 15 80 3 2.1 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4410 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 0.8 80 4.7 6.4 5.2 102 0.64 1 4.5 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 625 387 0.4 72.4 VGS=10V, VDS=15V, ID=18A 13.4 16.8 11 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 7 99 13 33 22.2 15 11 135 19.5 40 30 0.5 85 10500 5.5 7.4 6.2 1.1 Min 30 0.005 1 5 100 1.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : May 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 2.5V 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6.0 Normalized On-Resistance VGS=4.5V 1.6 ID=18A VGS=4.5V ID(A) VGS=2V 40 30 20 10 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 50 VDS=5V 60 5.5 RDS(ON) (m) 1.4 VGS=10V 1.2 5.0 VGS=10V 4.5 1 4.0 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 12 RDS(ON) (m) ID=18A 125C IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 125C 8 4 25C 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 7: Gate-Charge Characteristics 100000 VDS=15V ID=18A Capacitance (pF) 10000 Ciss 1000 Crss 100 0 5 Coss 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10ms 0.1s 1s 10s 100 100s 1ms Power (W) 10s 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C ID (Amps) 10.0 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 DC 10 VDS (Volts) 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse 0.001 0.01 0.00001 0.0001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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