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| v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Features Gain: 15.5 dB Noise Figure: 2.4 dB Single Supply Voltage: +5.0V 50 Ohm Matched Input/Output No External Components Required Small Size: 1.3 mm x 1.0 mm x 0.1 mm 1 AMPLIFIERS - CHIP Typical Applications The HMC392 is ideal for use as a low noise amplifier for: * Point to Point Radios * VSAT * LO Driver for HMC Mixers * Military EW, ECM, C3I * Space Functional Diagram General Description The HMC392 is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 15.5 dB of gain, 2.4 dB noise figure, and 28 dBm IP3 from a +5.0V supply voltage. The HMC392 has six bonding adjustment options which allow the user to select the bias point and output power of the device (+15 to +18 dBm). The HMC392 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.3 mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 25 13 13 Min. Typ. 4.0 - 6.0 15.5 0.018 2.4 15 15 16 18 28 50 23 12 0.025 3.0 11.5 Max. Min. Typ. 3.5 - 7.0 14 0.018 2.8 10 10 16 18 28 50 0.025 3.4 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted. 1 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) S21 S11 S22 17 - 25 GHz 5 0 -5 -10 -15 -20 -25 2 3 4 5 +25C +85C -55C 6 7 8 9 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -10 -10 -15 -15 -20 -20 -25 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) -25 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) Noise Figure vs. Temperature 5 4.5 4 NOISE FIGURE (dB) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) +25C +85C -55C 3.5 3 2.5 2 1.5 1 0.5 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25C +85C -55C -20 -30 -40 -50 -60 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 31 AMPLIFIERS - CHIP 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1 GAIN (dB) v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 1 AMPLIFIERS - CHIP P1dB vs. Temperature 22 21 20 19 P1dB (dBm) Psat vs. Temperature 22 21 20 19 Psat (dBm) +25C +85C -55C 18 17 16 15 14 13 12 11 10 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) 18 17 16 15 14 13 12 11 10 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25C +85C -55C Output IP3 vs. Temperature 32 31 30 29 OIP3 (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 5.5 GHz 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.5 Gain (dB), Noise Figure (dB), P1dB (dBm) 28 27 26 25 24 23 22 21 20 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) +25C +85C -55C Gain Noise Figure P1dB 4.75 5 Vs (Vdc) 5.25 5.5 P1dB vs. Power Select State 22 21 20 19 P1dB (dBm) Gain & Noise Figure vs. Power Select State 18 16 GAIN, NOISE FIGURE (dB) 14 12 10 8 6 4 2 0 Gain State 1 Gain State 2 Gain State 3 Gain State 4 Gain State 5 Gain State 6 NF State 1 NF State 2 NF State 3 NF State 4 NF State 5 NF State 6 18 17 16 15 14 13 12 11 10 3.5 4 4.5 5 5.5 State 1 Idd=75mA State 2 Idd=62mA State 3 Idd=55mA State 4 Idd=65mA State 5 Idd=50mA State 6 Idd=46mA 6 6.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) FREQUENCY (GHz) 1 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 8.125 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +7.0 Vdc +15 dBm 175 C 0.731 W Typical Supply Current vs. Vdd Vdd (Vdc) +4.5 +5.0 +5.5 (State 5 Depicted) Idd (mA) 49 50 51 1 AMPLIFIERS - CHIP 1 - 33 123 C/W -65 to +150 C -55 to +85 C Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 1 AMPLIFIERS - CHIP Pad Descriptions Pad Number 2 Function RF IN Description This pad is AC coupled and matched to 50 Ohms from 3.5 to 7.0 GHz. Interface Schematic Power Select 3 4 PS3 PS4 One of these pads must be connected to ground. See Power Select Table for selection criteria. Power Select 7 8 9 PS7 PS8 PS9 One of these pads must be connected to ground. See Power Select Table for selection criteria. 1, 5 Vdd, Vdd (alt.) Power supply voltage. Connect either pad1 or pad5 to +5V supply. No choke inductor or bypass capacitor is needed. 6 RF OUT This pad is AC coupled and matched to 50 Ohms from 3.5 to 7.0 GHz. Die Bottom GND Die bottom must be connected to RF/DC ground. Power Select Table State 1 2 3 4 5 6 Pads Bonded to Ground PS3 & PS7 PS3 & PS8 PS3 & PS9 PS4 & PS7 PS4 & PS8 PS4 & PS9 Typical Idd (mA) 75 62 55 65 50 46 Typical P1dB (dBm) 18.4 17.9 16.4 17.7 16.9 15.5 1 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v00.1002 MICROWAVE CORPORATION HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Assembly Diagram 1 AMPLIFIERS - CHIP Note: State 5 shown. PS3 and PS7 bonded to ground. Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 35 |
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