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IRFJ240
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
VDSS ID(cont) RDS(on) 200V 13A 0.18
14.48 (0.570) 14.99 (0.590)
4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
1.27 (0.050) 1.91 (0.750)
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
2
0.71 (0.028) 0.86 (0.034)
FEATURES
* HERMETICALLY SEALED TO-66 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS
TO-66 METAL PACKAGE (TO213AA)
Underside View Pin 1 = Gate Pin 2 = Source Case = Drain
* SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 20V 13A 8A 50A 70W 0.56W/C -55 to 150C 1.8C/W max. 50C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5265 Issue 1
IRFJ240
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance VDS = VGS VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.8BVDSS VDD = 75V ID = 7A Z0 = 4.7 ID = 16A 1275 500 160 43 16 27 16 27 40 31 30 60 80 60 13 50 IS = 13A VGS = 0 IF = 13A TJ = 25C di / dt 100A/s VDD 50V
(from 6mm down drain lead pad to centre of die)
Test Conditions
VGS = 0 ID = 1mA VGS = 10V ID = 7A* ID = 250A VDS = 0.8BVDSS TJ = 125C ID = 250A
Min.
200
Typ.
Max.
Unit
V
BVDSS Temperature Coefficient of
Reference to 25C
1.42 0.14 2 6 9 250 1000 100 -100 0.18 4
V / C V S( A nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDS ID x RDS(on) ID = 7A*
pF 60 nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance TJ = 25C
A V ns C
2 650 4.1 5.0 12.5
nH
(from 6mm down source lead to centre of source bond pad)
* Pulse width 300s; Duty Cycle 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5265 Issue 1

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