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| NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current V(BR)CEO IC = 50mA IEBO ICEX VEB = 6V VCE = Rated VCB, VEB = 1.5V VCE = Rated VCB, VEB = 1.5V, TC = +150C ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) VCE = 4V, IC = 20A IC = 50A, IB = 10A IC = 20A, IB = 2A IC = 50A, IB = 10A 50 - - - - - - - - 3.0 1.8 3.5 V V V 150 - - - - - - - - 100 10 1.0 V A A mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Small-Signal Current Gain Collector-Base Capacitance Rise Time Storage Time Fall Time hfe Cob tr ts tf VCC = 80V, IC = 20A, IB1 = 2A, IB2 = 2A VCE = 10V, IC = 1A, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz 3.0 - - - - - - - - - - 600 0.35 0.80 0.25 pF s s s Symbol Test Conditions Min Typ Max Unit Base .500 (12.7) .865 (21.95) Emitter .760 (19.3) Dia .083 (2.1) Dia Collector/Stud .083 (2.1) Dia .984 (25.0) .503 (12.6) .129 (3.3) 5/16-24 UNF .105 (2.65) Max .477 (12.1) |
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