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Bulletin I27132 rev. I 09/04
IRK.71, .91 SERIES
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
75 A 95 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IT(AV) or I F(AV) @ 85C IO(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It
2
IRK.71
75 165 1665 1740 13.86 12.56 138.6
IRK.91
95 210 1785 1870 15.91 14.52 159.1
Units
A A A A KA 2s KA 2s KA 2s V
o o
@ 50Hz @ 60Hz
I t VRRM range TSTG TJ
(*) As AC switch.
2
400 to 1600 - 40 to 125 - 40 to125
C C
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1
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 06 08 IRK.71/ .91 10 12 14 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V
400 600 800 1000 1200 1400 1600
IRRM IDRM 125C mA
V
500 700 900 1100 1300 1500 1700
V
400 600 800 1000 1200 1400 1600
15
On-state Conduction
Parameters
IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 165 1665 1740 1400 1470 1850 1940 I2 t Max. I2t for fusing 13.86 12.56 9.80 8.96 17.11 15.60 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 250 mA 400 (1) I2t for time t x = I2t x tx (4) I > x IAV 150 A/s 1.59 1.58 V 138.6 0.82 0.85 3.00 2.90 VT(TO) Max. value of threshold 210 A 1785 1870 1500 1570 2000 2100 15.91 14.52 11.25 10.27 20.00 18.30 159.1 0.80 0.85 2.40 2.25 KA2s V m KA s
2
IRK.71
IRK.91
Units
Conditions
180 o conduction, half sine wave, TC = 85o C
75
95
I(RMS)
t=8.3ms reapplied
or
I(RMS)
Sinusoidal half wave, Initial TJ = T J max.
t=10ms No voltage t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied t=10ms TJ = 25oC, t= 8.3ms no voltage reapplied t=0.1 to 10ms, no voltage reapplied,TJ = TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = x IT(AV) IFM = x IF(AV) TJ = T J max TJ = TJ max TJ = 25C Initial TJ = T J max.
TJ = 25 oC, from 0.67 V DRM , t r < 0.5 s, t p > 6 s I TM = x I T(AV), I g = 500mA,
T J = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x x I AV < I < x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
2
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Triggering
Parameters
PGM IGM Max. peak gate power PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative
IRK.71
12 3.0 3.0 10 4.0 2.5 1.7 270 150 80
IRK.91
12 3.0 3.0
Units
W A
Conditions
V
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
VGD IGD
0.25 6
V mA
TJ = 125o C, rated VDRM applied TJ = 125o C, rated VDRM applied
Blocking
Parameters
IRRM IDRM Max. peak reverse and off-state leakage current at VRRM , VDRM VINS RMS isolation voltage 2500 (1 min) 3500 (1 sec) 500 V V/s 15 mA TJ = 125 oC, gate open circuit 50 Hz, circuit to base, all terminals shorted T J = 125 oC, linear to 0.67 VDRM , gate open circuit
IRK.71
IRK.91
Units
Conditions
dv/dt Max. critical rate of rise of off-state voltage (5)
(5) Available with dv/dt = 1000V/s, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ Tstg Junction operating temperature range Storage temp. range resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm gr (oz) JEDEC 0.165
IRK.71
IRK.91
Units
C
Conditions
- 40 to 125 - 40 to 125 0.135 K/W Per module, DC operation Mounting surface flat, smooth and greased
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound
RthJC Max. internal thermal
R Conduction (per Junction)
Devices
IRK.71 IRK.91
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
180o 0.06 0.04 120o 0.07 0.05 90 o 0.09 0.06 60o 0.12 0.08 30 o 0.18 0.12 180o 0.04 0.03
Rect. wave conduction
120 o 0.08 0.05 90o 0.10 0.06 60o 0.13 0.08 30o 0.18 0.12
Units
C/W
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3
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Ordering Information Table
Device Code IRK.92 types With no auxiliary cathode
IRK
1 1 2 3 4 5 6 -
T
2
91
3
/
16
4
A
5
S90
6
Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT92/16A etc. * * Available with no auxiliary cathode. To specify change: 71 to 72 91 to 92
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1) ~
IRKH
(1) ~
IRKL
(1) ~
IRKN
(1)
-
+ (2)
+ (2)
+ (2)
(2)
+
(3) G1 K1 (4) (5) K2 G2 (7) (6)
G1 K1 (4) (5)
(3)
(3) K2 G2 (7) (6)
(3)
+
G1 K1 (4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Maximum Allowable Case T emperature (C)
Maximum Allowable Case T emperature (C) 130 120 110
Cond uction Angle
130 120 110
IRK.71.. S eries RthJC (DC) = 0.33 K/ W
IRK.71.. S eries R thJC (DC) = 0.33 K/ W
Cond uction Period
100 90 80 70 0 10 20 30 40 50 60 70 80 Average On-state Current (A)
100 90 30 80 70 0 20 40 60 80 100 120 Average On-state Current (A) 60 90 120
30
60
90
120 180
180
DC
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 Average On-state Current (A) 180 120 90 60 30 R MS Limit
Fig. 2 - Current Ratings Characteristics
140 120 100 80 RMS Limit 60 40 20 0 0 20 40 60 80 100 120 Average On-state Current (A)
Conduc tion Period
DC 180 120 90 60 30
Conduction Angle
IR K.71.. S eries Per Junction TJ = 125C
IRK.71.. S eries Per Junc tion TJ = 125C
Fig. 3 - On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A) ine
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IR K.71.. S eries Per Junc tion 10 100
Fig. 4 - On-state Power Loss Characteristics
1800 1600 1400 1200 1000 800
Peak Half S Wave On-state Current (A) ine
At Any Ra ted Loa d Condition And With Rated VRRM App lied Following S e. urg Initial TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s
Maximum Non Rep etitive S e Current urg Versus Pulse T rain Duration. Control Of Conduc tion May Not Be Ma intained . Initial T = 125C J No Volta ge Reap plied Ra ted V RRMReap p lied
IR K.71.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1
600 0.01
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
250 Maximum T otal On-s te Power Lo ss (W) ta 180 120 90 60 30
R th
2 0. W K/
A S
3 0.
200
=
W K/
0. 4
0. 5
0.
K/ W
/W 1K
150
K/ W
ta el -D
0.7 K/ W
R
100
Conduction Angle
1K /W
1.5 K/ W
3 K/ W
50
IRK.71.. S eries Per Mod ule TJ = 125C 0 20 40 60
0 80 100 120 140 160 180 0
20
40
60
80
100
120
140
T otal RMSOutp ut Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 7 - On-state Power Loss Characteristics
600 Maximum T otal Power Loss (W) 500 400 300 200 100 0 0 20 40 60 2 x IRK.71.. S eries S ingle Phase B ridge Connected T J = 125C
180 (S ine) 180 (R t) ec
Rt
0. 2
0. 3
0.5 K/ W
1 K/ W
2 K/ W
A hS
K/ W
K/ W
= 1 0. W K/ lt a e -D R
0 80 100 120 140 160 180
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 8 - On-state Power Loss Characteristics
800 Maximum T otal Power L (W) oss 700 600 500 400 300 200 100 0 0 40 80 120 160 200 0 240 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Ambient T emperature (C) 3 x IR K.71.. S eries T hree Pha se Brid ge Connected TJ = 125C 120 (R ect)
R
SA th
=
0. 1
0. 2
K/ W
K/ W
-D el ta
0.3 K/ W
0.5 K/ W
1 K/ W
R
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Maximum Allowable Cas T e emperature (C) IRK.91.. S eries RthJC (DC) = 0.27 K/ W Maximum Allowable Cas T e emperature (C) 130 120 110
Cond uc tion Angle
130 120 110
IRK.91.. S eries R thJC (DC) = 0.27 K/ W
Conduc tion Period
100 90 80 70 0 20 40 60 80 100 Average On-state Current (A)
100 90 80 70 0 20 40 60 80 100 120 140 160 Average On-state Current (A)
30
60 90 120 180
30
60 90 120 DC
180
Fig. 10 - Current Ratings Characteristics
Maximum Avera ge On-sta te P ower Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 11 - Current Ratings Characteristics
180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Average On-state Current (A)
Conduction Period
140 120 100 80 60 40 20 0 0 20 40 60 80 100 Average On-state Current (A)
Conduc tio n Angle
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30 RMS Limit
IR K.91.. S eries Per Junction TJ = 125C
IRK.91.. S eries Per Junc tion TJ = 125C
Fig. 12 - On-state Power Loss Characteristics
1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 13 - On-state Power Loss Characteristics
1800 1600 1400 1200 1000 800
Peak Half S Wave On-state Current (A) ine
At Any Rated Loa d Condition And With Rated V RRM Applied Following S e. urg Initial T = 125C J
Peak Half S ine Wave On-s tate Current (A)
@60 Hz 0.0083 s @50 Hz 0.0100 s
Ma ximum Non Repetitive S e Current urg Versus Pulse T rain Duration. Control Of Cond uc tion Ma y Not Be Ma intained . Initial TJ= 125C No Voltage R eap p lied Ra ted VRRM R eap p lied
IRK.91.. S eries Per Junction
IR K.91.. S eries Per Junction 0.1 Pulse T rain Duration (s) 1
600 0.01
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
350 Maximum T otal On-state Power Loss (W)
R th
300
250 200
180 120 90 60 30
0. 2
0. 3
SA
K/ W
= 1 0. W K/
K/ W
e lt -D
150
100 50 0
Conduc tion Angle
IRK.91.. S eries Per Mod ule TJ = 125C 0 40 80 120 160 200
0. 5K /W 0.7 K/ W 1K /W 1.5 K /W
a R
3KW /
240 0
20
40
60
80
100
120
140
T otal RMSOutp ut Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 16 - On-state Power Loss Characteristics
600 Maximum T otal Power Loss (W) 500 400 300 200 100 0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 T otal Output Current (A) Maximum Allowable Amb ient T emperature (C) 2 x IRK.91.. S eries S ingle Phase B ridge Connected T J = 125C
180 (S ine) 180 (R ect)
Rt
A hS
= 1 0. W K/
0. 2
K/ W
ta el -D
0. 3K /W
R
0.5 K/ W
1K / W
2 K/ W
Fig. 17 - On-state Power Loss Characteristics
900 Maximum T otal Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 3 x IRK.91.. S eries T hree Pha s B ge e rid Connected TJ = 125C 160 200 240 120 (Rect)
R
A S th
=
0. 1
K/ W
0. 2K /W
0.3 K/ W
-D el ta
R
0.5 K/ W
1 K/ W
0 280
20
40
60
80
100
120
140
T otal Output Current (A)
Maximum Allowable Ambient T emperature (C)
Fig. 18 - On-state Power Loss Characteristics
8
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
1000 Instantaneous On-state Current (A)
1000 Instantaneous On-state Current (A)
100
100 TJ= 25C 10 TJ= 125C IR K.91.. S eries Per Junction 1 0.5 1 1.5 2 2.5 3 3.5
TJ= 25C 10 TJ= 125C IRK.71.. S eries Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-s tate Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
Maximum R everse R overy Cha rge - Qrr (C) ec
Fig. 20 - On-state Voltage Drop Characteristics
Maximum R everse R covery Current - Irr (A) e 140 120 100 80 60 40 20 10 IRK.71.. S eries IRK.91.. S eries TJ = 125 C
I T = 200 A M 100 A 50 A 20 A 10 A
700 600 500
50 A
IRK.71.. S eries IRK.91.. S eries TJ = 125 C
IT = 200 A M 100 A
400 300 200 100 10
20 A
10 A
20
30
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s )
R ate Of Fall Of F orward Current - di/ dt (A/ s )
Fig. 21 - Recovery Charge Characteristics
T ransient T hermal Impedanc e Z thJC (K/W) 1 S teady S tate Value: RthJC = 0.33 K/ W RthJC = 0.27 K/ W (DC Operation) 0.1 IRK.71.. S eries IRK.91.. S eries
Fig. 22 - Recovery Current Characteristics
Per Junction
0.01 0.001
0.01
0.1 S quare Wave Pulse Duration (s)
1
10
Fig. 23 - Thermal Impedance Z thJC Characteristics
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
100 Instantaneous Gate Voltage (V)
R ectangular gate pulse a)Recommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/ dt: 15 V, 40 ohms 10 tr = 1 s, tp >= 6 s
(1) PGM (2) PGM (3) PGM (4) PGM (a)
T = -40 C J
= 200 W, tp = 300 s = 60 W, tp = 1 ms = 30 W, tp = 2 ms = 12 W, tp = 5 ms
(b)
T = 25 C J T = 125 C J
1
(4)
(3) (2)
(1)
VGD
IGD
0.1 0.001
IRK.71../ .91.. S eries Frequenc y Limited by PG(AV) 0.1 1 10 100 1000
0.01
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/04
10
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