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| SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.01 @ VGS = 4.5 V ID (A) 75a 70 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N03-07 SUB75N03-07 N-Channel MOSFET DS Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 75a 64 Unit V A 240 75 280 120c -55 to 175 mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70794 S-000652--Rev. D, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.25 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB75N03-07 Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 120 0.006 0.007 0.011 0.015 0.01 S W 30 V 1 2 "100 1 50 150 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.2 W , ID ] 75 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 75 A V V VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 5600 1100 450 70 18 10 18 12 60 22 30 20 ns 120 40 130 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 75 A, VGS = 0 V IF = 75 A, di/dt = 100 A/ms 1.2 55 75 A 200 1.5 100 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70794 S-000652--Rev. D, 27-Mar-00 SUP/SUB75N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7, 6 V 5V 150 100 Transfer Characteristics 200 I D - Drain Current (A) 80 I D - Drain Current (A) 60 100 4V 40 TC = 125_C 20 25_C -55_C 0 50 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C r DS(on) - On-Resistance ( W ) 100 g fs - Transconductance (S) 25_C 80 125_C 60 0.012 0.015 On-Resistance vs. Drain Current VGS = 4.5 V 0.009 VGS = 10 V 0.006 40 20 0.003 0 0 10 20 30 40 50 0 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 20 Gate Charge Ciss 6000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 16 VGS = 10 V ID = 75 A 12 4000 8 2000 Crss 0 0 6 12 Coss 4 0 18 24 30 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Document Number: 70794 S-000652--Rev. D, 27-Mar-00 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 10 TJ = 25_C TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.5 1.0 1 0.5 0 -50 0.1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 80 500 10 ms 100 ms Safe Operating Area 60 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 40 1 ms 10 10 ms TC = 25_C Single Pulse 100 ms dc 20 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TA - Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70794 S-000652--Rev. D, 27-Mar-00 2-4 |
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