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| polyfet rf devices L2701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 4.5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 45 TYP 30.0 WATTS OUTPUT ) MAX UNITS dB % 5:1 Relative TEST CONDITIONS Idq = 0.40 A, Vds = 28.0 V, F = Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz 500 MHz VSWR Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 1.6 0.65 10.00 60.0 1.6 30.0 MIN 65 2.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.20 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com L2701 POUT VS PIN GRAPH L 2 7 0 1 P in v s P o u t F r e q = 5 0 0 M H z , V d s = 2 8 V d c , Id q = .4 A 50 18 100 CAPACITANCE VS VOLTAGE L1B 1DIE C A PACITANCE 40 17 Ciss Coss 10 Pout 16 30 15 20 14 10 Gain E ffic ienc y @ 3 0 w a t t s = 5 5 % 13 1 12 0 0 .5 1 1 .5 P in i n W a tts 2 2 .5 3 0 5 10 Crss 0 15 20 25 30 VDS IN VOLTS IV CURVE L1B 1 DIE IV 12 10 ID & GM VS VGS L1B 1 DIE ID, GM vs VG ID 10 8 ID IN AMPS 6 1 GM 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 0 2 4 6 8 Vgs in Volts 10 12 14 vg=2v Vg=4v vg=10v vg=12v Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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