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| HERMETIC SILICON PHOTOTRANSISTOR L14N1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) L14N2 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) 0.100 (2.54) DIA. 2 1 0.038 (.97) NOM 0.046 (1.16) 0.036 (0.92) 45 O0.021 (0.53) 3X 3 0.050 (1.27) SCHEMATIC (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package. FEATURES * Hermetically sealed package * Wide reception angle * Device can be used as a photodiode by using the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300308 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 L14N2 Unit C C C C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/C above 25C ambient. 2. Derate power dissipation linearly 6.00 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Collector-Base leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14N1 On-State Collector Current L14N2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14N1 Saturation Voltage L14N2 IC = 10 mA, Ee = 0 IE = 100 A, Ee = 0 IC = 100 A, Ee = 0 VCE = 10 V, Ee = 0 VCB = 25 V, Ee = 0 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 1.5 mW/cm2, VCB = 5 V(7,8) IC = 10 mA, VCC = 5 V, RL =100 IC = 10 mA, VCC = 5 V, RL =100 IC = 0.8 mA, Ee = 3.0 mW/cm2(7,8) IC = 1.6 mA, Ee = 3.0 mW/cm2(7,8) BVCEO BVEBO BVCBO ICEO ICBO IC(ON) IC(ON) ICB(ON) tr tf VCE(SAT) VCE(SAT) 30 5 40 -- -- 40 1.0 2.0 5.0 14 16 -- -- -- -- -- 100 25 -- 0.40 0.40 V V V nA nA Degrees mA mA A s s V V www.fairchildsemi.com 2 OF 4 6/01/01 DS300308 HERMETIC SILICON PHOTOTRANSISTOR L14N1 Figure 1. Light Current vs. Collector to Emitter Voltage 10 8 6 4 IL, NORMALIZED LIGHT CURRENT 2 1 .8 .6 .4 .2 .1 .08 .06 .04 .02 .01 .01 .02 .04 .06 .08 .1 .2 Ee = 0.5 mW/cm2 Ee = 0.2 mW/cm2 Ee = 0.1 mW/cm2 NORMALIZED TO: Ee = 5 mW/cm2 VCE = 5 V TA = 25C PULSED tp = 300 sec 4 Ee = 20 mW/cm2 Ee = 10 mW/cm2 Ee = 5 mW/cm2 Ee = 2 mW/cm2 Ee = 1 mW/cm2 IL, NORMALIZED LIGHT CURRENT 2 1 8 6 4 2 1 .08 .06 .04 .02 .01 .1 4 6 8 10 20 .2 .4 .6 .8 1 2 L14N2 Figure 2. Normalized Light Current vs. Radiation NORMALIZED TO: Ee = 5 mW/cm2 VCE = 5 V TA = 25C PULSED tp = 300 sec 4 6 8 10 20 .4 .6 .8 1 2 Ee - TOTAL IRRADIANCE IN mW/cm2 VCE , COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. Light Current vs. Temperature 4 IF = 50 mA Figure 3. Dark Current vs. Temperature 10 5 IF = 20 mA IF = 10 mA 2 ICEO, NORMLIZED DARK CURRENT IL, NORMALIZED LIGHT CURRENT 104 103 102 10 1 NORMALIZED TO: TA = 25C VCE = 10 V 1 .8 .6 .4 .2 .1 .08 .06 .04 IF = 5 mA IF = 2 mA IF = 1 mA 0.1 0 10 20 30 40 50 60 70 80 90 100 TA, TEMPERATURE (C) NORMALIZED TO: IF = 5 mA VCE = 5 V TA = 25C .02 PULSED GAAS SOURCE (1N6265) TJ = TA, tp = 300 sec .01 -50 -26 0 IF = 0.5 mA 26 50 75 100 TA, TEMPERATURE (C) Figure 5. Angular and Spectral Response 100 1 tr and tf, NORMALIZED SWITCHING LIGHT SPEED 100 80 60 40 20 10 8 6 4 2 1 .8 .6 .4 .2 .1 .1 RL = 100 Figure 6. Switching Speed vs. Bias RL = 1000 RL = 500 RL = 250 RELATIVE OUTPUT (%) 80 0.8 RL = 1000 RL = 500 RL = 250 60 0.6 40 0.4 RL = 100 20 0.2 0 1100 0 -40 -20 0 20 40 500 700 900 , ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES) , WAVE LENGTH (NANOMETERS) NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 TA = 25C .2 .4 .6 .8 1 RL = 50 NORMALIZED TO: VCC = 5 V IC = 10 mA RL = 100 TA = 25C 8 10 .1 .2 .4 .6 .8 1 RL = 50 2 4 2 4 6 8 10 RISE TIME ICE, OUTPUT CURRENT (mA) FALL TIME DS300308 6/01/01 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14N1 L14N2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300308 6/01/01 4 OF 4 www.fairchildsemi.com |
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