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Schottky Barrier Diodes (SBD)
MA2Z785
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
0.5 0.1
K
A 0.625
* S-mini type 2-pin package, allowing high-density mounting * Allowing to rectify under (IF(AV) = 100 mA) condition * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Low VF (forward rise voltage), with high rectification efficiency * Reverse voltage VR (DC value) = 50 V guaranteed
2 0.16 - 0.06
+ 0.1
1
1.25 0.1
I Features
0.3 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 100 1 125 -55 to +125 Unit V V mA mA A C C
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 2E
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 25 3 Conditions Min Typ Max 30 0.55 Unit A V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
0.7 0.1
1
MA2Z785
IF V F
103
Schottky Barrier Diodes (SBD)
VF Ta
0.8 0.7
104 Ta = 125C
IR VR
102
103
Forward current IF (mA)
Forward voltage VF (V)
0.6 0.5 IF = 100 mA 0.4 0.3 0.2 10 mA 0.1 3 mA
Ta = 125C 10 75C 25C - 20C 1
Reverse current IR (A)
75C 102
10
25C
10-1
1
10-2
0
0.1
0.2
0.3
0.4
0.5
0.6
0 -40
10-1
0
40
80
120
160
200
0
10
20
30
40
50
60
Forward voltage VF (V)
Ambient temperature Ta (C)
Reverse voltage VR (V)
IR T a
104 VR = 50 V
60
Ct VR
5V 102
Terminal capacitance Ct (pF)
103
30 V
50
Reverse current IR (A)
40
30
10
20
1
10
10-1 -40
0
0
40
80
120
160
200
0
10
20
30
40
50
60
Ambient temperature Ta (C)
Reverse voltage VR (V)
2

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