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SI4300
Dual-Band Monolithic Power Amplifier System
Description
The SI4300 is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module (ASM). The integrated circuit consists of two amplification paths which supports GSM 900 and DCS 1800. These amplifiers are General Packet Radio Service (GPRS) class 12 compatible and can be used in GPRS multi-slot applications. The SI4300 integrates the input and output matching networks, complete power control, thermal and load mismatch protection, and many other features and functions in a single, standard CMOS die on a ceramic substrate.
Features
- Small 25 mm2 package (3.9 x 6.4 x 1.3 mm) - Complete power control - Thermal and load mismatch protection - Harmonic filtering - Input and output matching circuits - Optimal average burst current (ABC) for all power levels - Low powerdown current during receive and standby - GPRS Class 12 compatible - 3.0 to 4.8 V operation - JEDEC moisture sensitivity level (MSL) 1 - RoHS compliant
Applications
- E-GSM 900 and DCS 1800 dual-band cellular handsets - GPRS data terminals
VBAT
APC
Low Pass Filter Power Control
SI4300
RFIL
Limiter PA
Matching Network Harmonic Filter
RFOL
GND
Matching Network
Limiter
PA
RFOH
Harmonic Filter
RFIH TLIMIT PAEN VDD SHUTD BSEL
Monitor, Control, and I/O Interface Temperature and Voltage Sensors
Power Amplifier
Copyright (c) 2005 by Silicon Laboratories
11.10.05
SI4300
Dual-Band Monolithic Power Amplifier System
Selected Electrical Specifications
Parameter
Input Power Output Noise Power
Symbol
PIN
Test Condition
GSM Across all operating conditions RBW = 100 kHz, f = 925 to 935 MHz RBW = 100 kHz, f > 935 MHz, 6 dBm POUT = over all power levels, All combinations of the following: PIN = 3.5 to 11 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angles Post-PA loss 1.4 dB DCS Across all operating conditions RBW = 100 kHz, f = 1805-1880 MHz RBW = 100 kHz, f > 1880 MHz POUT = over all power levels, All combinations of the following: PIN = 3.5 to 9 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angles Post-PA loss 1.4 dB
Min
3.5 -- -- -- --
Typ
-- -- -86 1.6:1 --
Max
11 -72 -84 1.8:1 no damage or permanent degradation
Unit
dBm dBm dBm
Input VSWR Ruggedness
Input Power Output Noise Power
PIN PNOISE
3.5 -- -- -- --
-- -- -- 1.6:1 --
9 -77 -77 1.8:1 no damage or permanent degradation
dBm dBm dBm
Input VSWR Ruggedness
Pin Assignments
(Top View) N/C BSEL RFIL GND RFIH APC N/C
1
E A
Package Information
C A M DETAIL A 0.10
M
CAB
NC
15
14
RFOH
B
(2X) aaa C C1 P1 S2 S1 C2
2
GND 16 VBAT VBAT
13
PAEN
D C1
P4
P2
P3
S3 S4
S5
3 17 4 5
12 11 18 10
TLIMIT SHUTD
(2X) DETAIL D (6X) aaa C 0.10
M
DETAIL B (10X) 0.10
M
CAB
Bottom View
DETAIL C (3X) 0.10
M
VDD GND
CAB
CAB
Top View
Side View
6
GND 19 NC
20
9
H2 J2 h1 h2 K2
L2
H1
J1
K1
L1
7
8
RFOL
Dimension A H1 h1 H2 h2 J1 J2 K1 K2 MIN 1.17 0.55 0.35 0.35 0.15 0.27 0.35 0.35 0.35 NOM 1.30 0.60 0.40 0.40 0.20 0.32 0.40 0.40 0.40
DETAIL A
DETAIL B
DETAIL C
DETAIL D
MAX 1.43 0.65 0.45 0.45 0.25 0.37 0.45 0.45 0.45
Dimension MIN NOM MAX L1 0.35 0.40 0.45 L2 1.65 1.70 1.75 C1 2.70 BSC C2 2.60 BSC D 6.40 BSC E 3.90 BSC M 2.90 BSC P1 1.70 BSC P2 0.50 BSC
Dimension MIN NOM MAX P3 0.30 BSC P4 1.60 BSC S1 1.60 BSC S2 0.80 BSC S3 0.15 BSC S4 0.50 BSC S5 1.50 BSC aaa 0.10
Power Amplifier
Copyright (c) 2005 by Silicon Laboratories
11.10.05
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders

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