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PHOTOTRANSISTOR WP32P3C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE W34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. RoHS COMPLIANT. Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. SPEC NO: DSAF0434 APPROVED: J. Lu REV NO: V.1 CHECKED: Allen Liu DATE: FEB/28/2005 DRAWN: Y.W.WANG PAGE: 1 OF 2 ERP:1101003346 Electrical / Optical Characteristics at TA=25C Symbol VBR CEO VBR ECO VCE (SAT) ICEO TR TF Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10 to 90 ) Fall Time (90 to 10 ) Min. 30 5 Typ. 3 3 Max. 0.8 100 Units V V V nA us us Test Conditions IC=100uA Ee=0mW/cm2 IE=100uA Ee=0mW/cm2 IC=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VCE = 5V IC=1mA RL=1000 VCE = 5V Ee=1mW/cm2 =940nm I(ON) On State Collector Current 0.1 0.5 - mA Absolute Maximum Ratings at TA=25C Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead Solder Temperature (>5mm for 5sec) Max.Ratings 30V 5V 100mW -40C ~ +85C -40C ~ +85C 260C SPEC NO: DSAF0434 APPROVED: J. Lu REV NO: V.1 CHECKED: Allen Liu DATE: FEB/28/2005 DRAWN: Y.W.WANG PAGE: 2 OF 2 ERP:1101003346 |
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