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 7MBR30SC060
PIM/Built-in converter with thyristor and brake (S series) 600V / 30A / PIM
Features
* Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
* Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 30 60 30 120 600 20 20 40 80 600 800 800 30 275 125 800 30 210 221 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m
Brake
Inverter
Continuous 1ms 1 device
Thyristor
50Hz/60Hz sine wave Tj=125C, 10ms half sine wave
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
7MBR30SC060
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=30mA VGE=15V, Ic=30A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=30A VGE=15V RG=82 IF=30A chip terminal IF=30A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=20A, VGE=15V chip terminal VCC=300V IC=20A VGE=15V RG=120 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=30A chip terminal IF=30A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 75 200 5.5 7.8 8.5 1.8 1.95 2.4 3000 0.45 0.25 0.40 0.05 1.8 1.95 1.2 0.6 1.0 0.35 2.6 300 75 200 2.4 1.2 0.6 1.0 0.35 75 1.0 1.0 100 2.5 1.2 Unit A nA V V pF s
Min.
Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
V ns A nA V s
Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage
1.8 1.95 0.45 0.25 0.40 0.05
Brake
Thyristor
Converter
1.0 1.1 1.1 1.2 5000 495 3375
A mA mA mA V V V
Thermistor
Reverse current Resistance B value
1.5 75 520 3450
A K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.04 2.00 1.56 1.00 1.33 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
7MBR30SC060
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
70
70
VGE= 20V 15V 60
12V 60
VGE= 20V 15V
12V
50
50
Collector current : Ic [ A ]
40
Collector current : Ic [ A ]
40
30
30
20
20
10V
10V 10 10
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
70 Tj= 25C 60 Tj= 125C 8 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
50
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
6
40
30
4
20
Ic= 60A 2 Ic= 30A Ic= 15A
10
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
10000 500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=30A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
Cies
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35
0 0 50 100 150
0 200
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
7MBR30SC060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=82, Tj= 25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 82, Tj= 125C
ton
toff
Switching time : ton, tr, toff, tf [ nsec ]
toff tr
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
100
100
tf
tf
10 0 10 20 30 40 50
10 0 10 20 30 40 50
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=30A, VGE=15V, Tj= 25C
5000 3.0
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=82
ton
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
2.5
Eon(125C) Eoff(125C)
2.0
Eon(25C)
1.5 Eoff(25C) 1.0
100
tf
0.5
Err(125C)
Err(25C) 10 30 50 100 500 0.0 0 10 20 30 40 50 60
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=30A, VGE=15V, Tj= 125C
6 350
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=82, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
5
Eon
300
250 4
Collector current : Ic [ A ]
200 SCSOA (non-repetitive pulse)
3
Eoff
150
2
100
1 Err 0 30 50 100 500
50
RBSOA (Repetitive pulse)
0 0 200 400 600 800
Gate resistance : Rg [ ]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR30SC060
[ Inverter ] Forward current vs. Forward on voltage (typ.)
70 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=82
60
Tj=125C Tj=25C
50
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
100 trr(125C) trr(25C)
Forward current : IF [ A ]
40
30
20
Irr(125C) 10 Irr(25C)
10
0 0 1 2 3
5 0 10 20 30 40 50
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ] Forward current vs. Forward on voltage (typ.)
70 100
[ Thyristor ] On-state current vs. On-state voltage (typ.)
60
Tj= 25C
Tj= 125C
Tjw= 125C
Tjw= 25C
50
40
30
Instantaneous on-state current [ A ]
0.4 0.8 1.2 1.6 2.0
Forward current : IF [ A ]
10
20
5
10
0 0.0
2 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
10 200 100
[ Thermistor ] Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
FWD[Inverter]
Resistance : R [ k ]
1
IGBT[Brake] Conv. Diode IGBT[Inverter] Thyristor
10
1
0.1
0.05 0.001
0.01
0.1
1
0.1 -60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ C ]
IGBT Module
7MBR30SC060
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
50 50
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
VGE= 20V 15V 40
12V 40
VGE= 20V
15V
12V
Collector current : Ic [ A ]
30
Collector current : Ic [ A ]
30
20
20
10 10V
10 10V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
50 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
Tj= 25C 40
Tj= 125C
30
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
20
4
Ic= 40A 2 Ic= 20A Ic= 10A
10
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
5000 500
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=20A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
1000
300
15
200
10
Coes Cres 100
100
5
50 0 5 10 15 20 25 30 35
0 0 20 40 60 80 100
0 120
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
400
20
IGBT Module
Outline Drawings, mm
7MBR30SC060
Marking : White Marking : White
Equivalent Circuit Schematic
[ Converter ]
21 (P)
[ Thyristor ]
26
[ Brake ]
22(P1)
[ Inverter ]
[ Thermistor ]
8 25 20 (Gu) 18 (Gv ) 16 (Gw)
9
1(R)
2(S)
3(T) 19(Eu) 7(B)
17(Ev ) 4(U)
15(Ew) 5(V)
6(W)
14(Gb) 23(N) 24(N1)
13(Gx)
12(Gy )
11(Gz) 10(En)


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