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| v01.0801 MICROWAVE CORPORATION HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Typical Applications The HMC264 is ideal for: * Microwave Point to Point Radios * LMDS * SATCOM Features Integrated LO Amplifier: -4 dBm Input Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: 40 dB Small Size: 0.97mm x 1.32mm Functional Diagram General Description The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4dBm nominal drive requirement. All data is measured with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). 5 MIXERS - CHIP Electrical Specifications, TA = +25 C, As a Function of LO Drive & Vdd Parameter IF = 1 GHz LO = 0 dBm & Vdd = +4V Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2LO to RF Isolation 2LO to IF Isolation IP3 (Input) 1 dB Gain Compression (Input) Supply Current (Idd) 29 32 5 +3 Typ. 24 - 32 12 - 16 DC - 6 10 10 35 40 13 +6 28 13 13 29 29 5 -3 Max. IF = 1 GHz LO = -4 dBm & Vdd = +4V Min. Typ. 20 - 30 10 - 15 DC - 6 10 10 40 40 ~ 50 13 0 ~ +4 28 12 12 18 25 3 -5 Max. IF = 1 GHz LO = -4 dBm & Vdd = +3V Min. Typ. 22 - 29 10.5 - 14.5 DC - 4 9 9 22 ~ 30 30 10 0 ~ +3 25 11 11 Max. GHz GHz GHz dB dB dB dB dBm dBm mA Units 5 - 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Conversion Gain vs. Temperature @ LO = -4 dBm, Vdd = +4V 0 -55 C +25 C Conversion Gain vs. Temperature @ LO = -4 dBm, Vdd = +3V 0 +25 C CONVERSION GAIN (dB) CONVERSION GAIN (dB) -5 -5 +85 C -10 -10 -15 +85 C -20 -15 -55 C -20 -25 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -25 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) 5 MIXERS - CHIP Conversion Gain vs. LO Drive @ Vdd = +4V 0 0dBm Conversion Gain vs. LO Drive @ Vdd = +3V 0 -4dBm -2dBm -10 CONVERSION GAIN (dB) -5 -2dBm -10 -8dBm -6dBm -20 -4dBm CONVERSION GAIN (dB) -5 -15 -15 -6dBm -20 -25 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -25 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) Isolation @ LO = -4 dBm, Vdd = +4V 10 0 -10 LO/IF Isolation @ LO = -4 dBm, Vdd = +3V 10 0 -10 LO/IF LO/RF RF/IF ISOLATION (dB) -20 -30 -40 -50 -60 -70 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) 2LO/RF 2LO/IF RF/IF ISOLATION (dB) LO/RF -20 -30 -40 -50 -60 -70 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) 2LO/RF 2LO/IF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 51 MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Input IP3 vs. LO Drive @ Vdd = +4V 20 Input IP3 vs. LO Drive @ Vdd = +3V 20 THIRD ORDER INTERCEPT (dBm) -2 dBm 15 10 5 -6 dBm 0 -5 -10 -4 dBm THIRD ORDER INTERCEPT (dBm) -2 dBm 15 10 5 0 -5 -10 -6 dBm -4 dBm 5 MIXERS - CHIP 20 18 20 22 24 26 28 30 32 34 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Input IP3 vs. Temperature @ LO = -4 dBm, Vdd = +4V THIRD ORDER INTERCEPT (dBm) Input IP3 vs. Temperature @ LO = -4 dBm, Vdd = +3V 20 -55C 15 10 5 +85C 0 -5 -10 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) +25C THIRD ORDER INTERCEPT (dBm) 15 10 5 +85C 0 -5 -10 18 20 22 24 26 -55C +25C 28 30 32 34 RF FREQUENCY (GHz) Input IP2 vs. LO Drive @ Vdd = +4V SECOND ORDER INTERCEPT (dBm) 60 50 40 30 20 10 0 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -6 dBm Input IP2 vs. LO Drive @ Vdd = +3V SECOND ORDER INTERCEPT (dBm) 60 50 40 30 20 10 0 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -2dBm -4dBm -6 dBm -4dBm -2dBm 5 - 52 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Input IP2 vs. Temperature @ LO = -4 dBm, Vdd = +4V SECOND ORDER INTERCEPT (dBm) 60 50 40 30 +25C 20 -55C 10 0 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) +85C Input IP2 vs. Temperature @ LO = -4 dBm, Vdd = +3V SECOND ORDER INTERCEPT (dBm) 60 50 +85C 40 30 20 +25C 10 0 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -55C 5 MIXERS - CHIP 5 - 53 P1dB vs. Temperature @ LO = -4 dBm, Vdd = +4V 7 6 5 -55 C 4 +25 C P1dB vs. Temperature @ LO = -4 dBm, Vdd = +3V 7 6 5 4 +25 C P1dB (dBm) P1dB (dBm) 3 2 1 0 -1 -2 -3 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) +85 C 3 2 1 0 -1 -2 -3 18 20 -55 C +85 C 22 24 26 28 30 32 34 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Upconverter Performance Conversion Gain, LO = -4 dBm 0 Return Loss @ LO = -4 dBm, Vdd = +4V 0 IF CONVERSION GAIN (dB) -5 Vdd=+4V -10 RETURN LOSS (dB) -5 -10 RF -15 Vdd=+3V LO -15 -20 5 MIXERS - CHIP -25 16 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) -20 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) IF Bandwidth @ LO = -4 dBm, Vdd = +4V 0 MxN Spurious Outputs @ LO Drive = -4 dBm, Vdd = +4V nLO mRF -3 5 4 3 2 1 0 IF CONVERSION GAIN (dB) -5 -2 -1 -36 -54 -22 -34 -15 x -54 -74 -67 -38 -66 +26 -30 -10 -10 0 1 -15 2 3 -20 -25 0 1 2 3 4 5 6 7 8 9 10 IF FREQUENCY (GHz) RF = 30 GHz @ -10 dBm LO = 13.5 GHz @ -4 dBm All values in dBc below the IF power level 5 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +4V) LO Drive (Vdd = +4V) Vdd Storage Temperature Operating Temperature +13 dBm +13 dBm +5.5 Vdc -65 to +150 C -55 to +85 C 5 MIXERS - CHIP 5 - 55 Outline Drawing (See Handling Mounting Bonding Note) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006". 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz MIC Assembly Techniques 5 MIXERS - CHIP Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. The photo in figure 3 shows a typical assembly for the HMC264 MMIC chip. Figure 3: Typical HMC264 Assembly 5 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 5 MIXERS - CHIP 5 - 57 Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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