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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM56 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack * Also available with preformed leads for easy insertion. DESCRIPTION BYM56 series This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYM56A BYM56B BYM56C BYM56D BYM56E VRWM crest working reverse voltage BYM56A BYM56B BYM56C BYM56D BYM56E VR continuous reverse voltage BYM56A BYM56B BYM56C BYM56D BYM56E IF(AV) average forward current PARAMETER repetitive peak reverse voltage , a MAM104 CONDITIONS MIN. - - - - - - - - - - - - - - - MAX. 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 3.5 V V V V V V V V V V V V V V V A UNIT Ttp = 60 C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 - - 1.4 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax 2 - 80 A 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series SYMBOL ERSM Tstg Tj PARAMETER non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.5 CONDITIONS L = 120 mH; Tj = Tj max prior to surge; inductive load switched off MIN. - -65 -65 MAX. 20 +175 +175 UNIT mJ C C ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYM56A BYM56B BYM56C BYM56D BYM56E IR reverse current VR = VRRMmax; see Fig.7 VR = VRRMmax; Tj = 165 C; see Fig.7 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 VR = 0 V; f = 1 MHz; see Fig.8 CONDITIONS IF = 3 A; Tj = Tj max; see Fig.6 IF = 3 A; see Fig.6 IR = 0.1 mA 225 450 650 900 1100 - - - - - - - - - - 3 - - - - - 1 150 - V V V V V A A s MIN. - - TYP. - - MAX. 0.95 1.15 V V UNIT Cd diode capacitance - 90 - pF THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.9. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 25 75 UNIT K/W K/W 1996 May 24 3 Philips Semiconductors Product specification Controlled avalanche rectifiers GRAPHICAL DATA MBG037 BYM56 series MBG058 handbook, halfpage 5.0 IF(AV) (A) handbook, halfpage 2.0 IF(AV) (A) 4.0 1.6 3.0 1.2 2.0 0.8 1.0 0.4 0 0 40 80 120 160 200 Ttp (oC) 0 0 40 80 120 160 200 Tamb (oC) a = 1.57; VR = VRRMmax; = 0.5. Lead length 10 mm. a = 1.57; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.9. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGC746 handbook, halfpage 5 handbook, halfpage 200 MSA873 P (W) 4 a=3 2.5 2 1.57 1.42 Tj (C) 3 100 2 1 A B C D E 0 0 1 2 3 IF(AV) (A) a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. 4 0 0 400 800 VR (V) 1200 Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Solid line = VR. Dotted line = VRRM; = 0.5. Fig.5 Maximum permissible junction temperature as a function of reverse voltage. 1996 May 24 4 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series MBG046 MGC734 handbook, halfpage 16 10 3 handbook, halfpage IR (A) IF (A) 12 10 2 max 8 10 4 1 0 0 1 VF (V) 2 10 -1 0 40 80 120 160 Tj (oC) 200 Solid line: Tj = 25 C. Dotted line: Tj = 175 C. VR = VRRMmax. Fig.6 Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. 10 2 handbook, halfpage MBG027 handbook, halfpage 50 25 Cd (pF) 7 10 50 2 3 1 10 102 VR (V) 10 3 MGA200 1 f = 1 MHz; Tj = 25 C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Device mounted on a printed-circuit board. 1996 May 24 5 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 May 24 6 Philips Semiconductors Product specification Controlled avalanche rectifiers PACKAGE OUTLINE BYM56 series handbook, full pagewidth k 4.5 max 28 min Dimensions in mm. Fig.11 SOD64. , 5.0 max a 1.35 max 28 min MBC049 LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 May 24 7 |
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