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GaAs MMIC
CMY 200
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Preliminary Data
* * * * * * * * * Ultralinear Downconverter 1200MHz to 40MHz Operating Voltage Range: 3 to 6V Very low Current Consumption, typ. 45mA Single ended Input and Output RF- and IF-Port Impedance close to 50 Ohm Very wide LO-Level Range All Gold Metallisation Chip fully passivated Very small Outlines ESD: Electrostatic discharge sensitive device
Observe handling Precautions!
LO in GND VdLO 3 2 1
5 4 IF;VdIF GND
6 RFin
Type
Marking
Ordering code (tape and reel)
Package 1) (outlines see page 8)
CMY 200
M1
Q62702-M6
MW-6
Maximum Ratings Supply Voltage to LO-Amp Supply Voltage to IF-Amp DC-Voltage to RF-Port DC-Voltage to Input LO-Amp RF Input Power LO Input Power Channel Temperature Storage Temperature Thermal Resistance Channel to Soldering Point (GND)
Symbol min Vd,LO Vd,IF VRF Vin,LO Pin,RF Pin,LO TCh Tstg -55 0 0 -6 -3
Value max 6 6 +6 0 10 10 150 150
Unit V V V V dBm dBm C C
RthChS
100
K/W
1) For detailed dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
pg. 1/7
11.01.1996 HL EH PD 21
GaAs MMIC
CMY 200
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Electrical Characteristics Test Conditions: Ta = 25C; Vdd = 5V; see test circuit fRF = 1224MHz; fLO = 1185MHz; PLO = -2dBm; fIF = 39MHz unless otherwise specified
Parameter, Test Conditions Operating Current Required LO-Power Conversion Gain Single-Side-Band Noise Figure 3rd Order IMD
2 Tones Pin = 2 x -15dBm fRF1 = 1224MHz; fRF2= 1219MHz
Symbol Iop PLO Gmix Fssb dIM3 IP3in PLO,RF P-1dB,out
min 25 6 -
typ 50 -5 8 8
max 70 -2 10
Unit mA dBm dB dB dBc
3rd Order Input Intercept Point
Pin=-12dBm; 2 Tones 5MHz apart
18
-65 21,5 -9 17
-60 dBm dBm dBm
LO Leakage at RF-Port P-1dB Output Power
Test Circuit
Vdd = +5V
Element L1 L2 L3 C1 C2 C3
Value 6nH 12nH 22H 22pF 47pF 1nF
Notes 1) 2)
CMY200 L1 RFin (50Ohm) 6
5 4
L3 C3 IFout (50Ohm) L2
VdIF 1 3 VdLO C2 2
LOin (50Ohm) C1
Note 1: approximate value for RF-frequency 1224MHz (the value can be tuned for minimum F ssb at RF-frequency) Note 2: approximate value for LO-frequency 1185MHz (the value ist tuned for max. gain of the LO-amplifier at LO-frequency; Indicator is e.g. a minimum DC-current consumption into port 3 at very low LO-power (<-10dBm) into port 1 or a maximum available Gmix at very low LO-power (<-10dBm) into port 1)
Siemens Aktiengesellschaft
pg. 2/7
11.01.1996 HL EH PD 21
GaAs MMIC
Operating Current Iop = f(Vdd) PLO = -2dBm 100
CMY 200
Operating Current Iop = f(PLO) Vdd = +5V
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100
Iop
90 80 mA 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 V 8 9 10
Iop
90 80 mA 70 60 50 40 30 20 10 0 -10 -8 -6 -4 -2 0 24 PLO 6 8 10 dBm
Vdd
Conversion Gain Gmix = f(Vdd) PLO = -2dBm; fRF = 1224MHz; fLO = 1185MHz 10 Gmix 9 8 dB 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 V 8 9 10 Vdd dB 7 6 5 4 3 2 1 0 10 Fssb 9 8
SSB Noise Figure Fssb = f(Vdd) PLO = -2dBm; fRF=1224MHz; fLO = 1185MHz
0
1
2
3
4
5
6
7 V
8
9
10 Vdd
Siemens Aktiengesellschaft
pg. 3/7
11.01.1996 HL EH PD 21
GaAs MMIC
Conversion Gain Gmix = f(PLO) Vdd = 5V; fRF = 1224MHz; fLO = 1185MHz 10 Gmix 9 8 dB 7 6 5 4 3 2 1 0 -10 -8 -6 -4 -2 0 24 PLO 6 8 10 dBm dB 7 6 5 4 3 2 1 0 -10 -8 -6 -4 -2 10 Fssb 9 8
CMY 200
SSB Noise Figure Fssb = f(PLO) Vdd = +5V; fRF=1224MHz; fLO = 1185MHz
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0
24 PLO
6
8 10 dBm
Third Order IMD Pin = 2 x -15dBm; PLO = -2dBm 0 0
Third Order IMD dIM3 = f(Vdd) Pin = 2 x -15dBm; PLO = -2dBm
IFout -10
-20 dBm -30 -40 -50 -60 -70 -80 -90 -100 30
dIM3 -10
-20 dBc -30 -40 -50 -60 -70 -80 -90 -100 35 40 45 f 50 55 MHz 0 1 2 3 4 5 6 7 V 8 9 10 Vdd
Siemens Aktiengesellschaft
pg. 4/7
11.01.1996 HL EH PD 21
GaAs MMIC
Third Order IMD dIM3 = f(PLO) Vdd = +5V; Pin = -12dBm Tones 5MHz apart 0 20
CMY 200
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Power at 1dB Gain Compression P-1dB=f(Vdd) PLO = -2dBm; fRF = 1224MHz; fLO = 1185MHz
dIM3 -10
-20 dBc -30 -40 -50 -60 -70 -80 -90 -100 -10 -8
P-1dB 18
Pout 16 dBm 14 12 10 8 6 4 2 0 -6 -4 -2 0 2 4 6 8 10 0 1 2 3 4 5 6 7 V SSB Noise Figure Fssb = f(fLO) PLO = -2dBm; fRF = fLO + fIF; fIF = 39MHz 10 8 9 10 PLO Conversion Gain Gmix = f(fLO) PLO = -2dBm; fRF = fLO + fIF; fIF = 39MHz Pin
dBm
Vdd
10
Gmix
9 8 dB 7 6 5 4 3 2 1 0 1 1,1 1,2 1,3 GHz 1,4
Fssb
9 8 dB 7 6 5 4 3 2 1 0
1
1,1
1,2
1,3 GHz
1,4
fLO
fLO
Siemens Aktiengesellschaft
pg. 5/7
11.01.1996 HL EH PD 21
GaAs MMIC
Conversion Gain Gmix = f(f IF) fLO = 1185MHz; PLO = -2dBm; fRF = fLO+fIF 10 Gmix 9 8 dB 7 6 5 4 3 2 1 0 0 20 40 60 MHz 80 100 f IF dB 10 Fssb 9 8 7 6 5 4 3 2 1 0 0 20 40
CMY 200
SSB Noise Figure Fssb = f(f IF) fLO = 1185MHz; PLO = -2dBm; fRF = fLO+fIF
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60 MHz
80
100 f IF
Siemens Aktiengesellschaft
pg. 6/7
11.01.1996 HL EH PD 21
GaAs MMIC
Typical Reflexion Coefficients of CMY 200, Z0 = 50
Input Impedance into RF-Port ( Pin #6 ) @ PLO=-2dBm; fLO=1185 MHz Reflexion Coefficient Mag Ang 0,94 0.82 0.75 0.69 0.64 0.57 0.48 0.36 0.23 0.13 0.15 0.21 0.33 0.42 0.47 0.47 0.48 0.47 0.44 0.42 0.40 0.38 0.36 0.36 -22 -40 -50 -63 -76 -89 -102 -112 -117 -105 -53 -44 -43 -52 -67 -73 -80 -84 -91 -97 -103 -108 -111 -113 Impedance into IF-Port ( Pin #4 ) @ PLO=-2dBm; fLO=1185MHz Reflexion Coefficient Mag Ang 0.25 0.32 0.34 0.35 0.32 0.27 0.22 0.21 0.26 0.32 0.41 0.45 0.47 0.48 0.49 0.50 0.50 0.50 0.50 0.50 -1 4 -1 -7 -14 -17 -11 7 19 22 15 9 3 -2 -5 -8 -9 -11 -13 -14
CMY 200
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Input Impedance into LO-Port ( Pin #1 ) Reflexion Coefficient Mag Ang 0.98 0.97 0.98 0.99 1.0 1.02 1.04 1.05 1.06 1.07 1.00 0.94 0.88 0.80 0.75 0.69 0.65 0.62 0.60 0.58 0.55 0.53 0.50 0.48 -6 -12 -17 -22 -28 -33 -40 -43 -55 -61 -75 -80 -83 -86 -87 -87 -87 -86 -85 -85 -86 -87 -88 -90
f MHz 100 200 300 400 500 600 700 800 900 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1600 1700 1800 1900 2000
Siemens Aktiengesellschaft
pg. 7/7
11.01.1996 HL EH PD 21

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