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CS 8
Phase Control Thyristors
VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A
TO-64
1 2 3 2
VRSM VDSM V 900 1300
VRRM VDRM V 800 1200
Type
CS 8-08io2 CS 8-12io2
3
1
M5
1 = Anode, 2 = Cathode, 3 = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM Tcase = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 25 16 250 270 200 220 310 306 200 200 150 A A A A A A As A2s A2s A2s A/ms
2
Features Thyristor for line frequencies International standard package JEDEC TO-64 Planar glassivated chip Long-term stability of blocking currents and voltages
q q q q
It
2
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Applications Motor control Power converter AC power controller
q q q
q
(di/dt)cr
TVJ = TVJM repetitive, IT = 48 A f = 50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.2 A non repetitive, IT = IT(AV)M diG/dt = 0.2 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M tP = 30 ms tP = 300 ms
q q
500 1000 10 5 0.5 10 -40...+125 125 -40...+125
A/ms V/ms
Advantages Space and weight savings Simple mounting Improved temperature and power cycling
(dv/dt)cr PGM PG(AV) VRGM TVJ TVJM Tstg Md Weight
Dimensions in mm (1 mm = 0.0394") W W W V C C C Nm lb.in. g
Mounting torque
2.5 22 6
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-3
CS 8
Symbol IR, ID VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 33 A; TVJ = 25C Characteristic Values 3 1.6 1.0 18 typ. 2.5 3.5 30 50 0.2 1 100 80 2 60 1.5 2.5 1.55 1.55 50 mA V V mW V V mA mA V mA mA mA ms ms K/W K/W mm mm m/s2
For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM
TVJ = 25C; tP = 10 ms IG = 0.09 A; diG/dt = 0.09 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.09 A; diG/dt = 0.09 A/ms TVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM DC current DC current Creepage distance on surface Strike distance through air Max. acceleration, 50 Hz
Accessories: Nut M5 DIN 439/SW8 Lock washer A5 DIN 128
4 V
102
50 A 40
ms
B C
tgd
IGT: TVJ= -40C
typ.
lim.
VG
3
B B
IGT: TVJ= 25C
101
IT 30
IGT: TVJ= 0C
2
lim.
100
20
1
typ. A
0 0
IGD: TVJ= 25C IGD: TVJ=125C
10
TVJ= 125C TVJ= 25C
25
50 IG
mA
75
10-1 10-2
10-1
100 t
A 101
0 0.0
0.5
1.0
1.5 V VT
2.0
Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time tgd
Fig. 3 On-state characteristics
(c) 2000 IXYS All rights reserved
2-3
CS 8
300 A 250 ITSM 200 1000 800 As
2
20
VR = 0 V
A 15 IT(AV)M
50Hz, 80%VRRM TVJ = 45C TVJ = 125C
600 I2t 400
150
10
TVJ = 45C
100 200 5 50
TVJ = 125C
0 10-3
100 10-2 10-1 t 100 s 101 1 2 3 4 5 6 7 ms 10 89 t
0 0 50 100 C 150 Tcase
Fig. 4 Surge overload current ITSM: crest value, t: duration
40 W 30 PT
Fig. 5 I2t versus time (1-10 ms)
Fig. 6 Maximum forward current at case temperature 180 sine
RthJA :
2.8 K/W 3.2 K/W 3.6 K/W 3.6 K/W
20
DC 180 sin 120 60 30
5.2 K/W 7 K/W
10
0 0 5 10 15 20 25 A IT(AV)M 0 30 50 100
Tamb
C 150
Fig. 7 Power dissipation versus on-state current and ambient temperature
3.5 K/W 3.0 2.5 ZthJH 2.0 1.5 1.0 0.5 0.0 10-3
RthJH for various conduction angles d:
d = 30 d = 60 d = 120 d = 180 d = DC
d DC 180 120 60 30
RthJH (K/W) 2.5 2.79 2.95 3.17 3.32
Constants for ZthJH calculation: i 1 2 3 4 5 6
10-2 10-1 100 101 102 t s 103
Rthi (K/W) 0.252 0.333 0.5 0.833 0.416 0.166
ti (s) 0.005 0.0225 0.145 0.43 2.75 23
Fig. 8 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
3-3

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