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PD - 95344
SMPS MOSFET
Applications
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IRF7468PBF
HEXFET(R) Power MOSFET
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High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free
S S S G
VDSS
40V
RDS(on) max(mW)
15.5@VGS = 10V
ID
9.4A
1
8 7
A A D D D D
Benefits
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2
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
40 12 9.4 7.5 75 2.5 1.6 0.02 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
8/17/04
IRF7468PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 40 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.8 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.025 11.7 13.0 18.0 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 15.5 VGS = 10V, ID = 9.4A 17.0 m VGS = 4.5V, ID = 7.5A 35.0 VGS = 4.5V, ID = 4.7A 2.0 V VDS = VGS, ID = 250A 20 VDS = 32V, VGS = 0V A 100 VDS = 32V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 27 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 23 6.4 6.7 17 7.6 2.3 20 3.8 2460 490 38 Max. Units Conditions --- S VDS = 20V, ID = 8.0A 34 ID = 8.0A 9.6 nC VDS = 20V 10 VGS = 4.5V, 26 VGS = 0V, VDS = 16V --- VDD = 20V --- ID = 8.0A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 20V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
160 8.0
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.81 0.65 45 76 58 110 2.3 A 74 1.3 --- 68 110 87 160 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 8.0A, VGS = 0V TJ = 125C, IS = 8.0A, VGS = 0V TJ = 25C, I F = 8.0A, VR=20V di/dt = 100A/s TJ = 125C, IF = 8.0A, VR=20V di/dt = 100A/s
2
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IRF7468PBF
1000
VGS 15V 10V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP
100
10
10
1
2.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
2.0V
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
0.1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 150 C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 10A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 C
1.0
1
0.5
0.1 2.0
V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7468PBF
100000
10
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 8.0A VDS = 32V VDS = 20V
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
4
100
Crss
2
10 1 10 100
0 0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
I D , Drain Current (A)
TJ = 150 C
100 10us
100us 10 1ms
1
TJ = 25 C
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
1
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7468PBF
10.0
VDS
8.0
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
-V DD
6.0
4.5V
4.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7468PBF
RDS (on) , Drain-to-Source On Resistance ()
RDS(on) , Drain-to -Source On Resistance ()
0.020
0.025
0.018
0.020
0.016 VGS = 4.5V
0.014
0.015
ID = 10A
0.012 VGS = 10V 0.010 0 20 40 60 80 100 ID , Drain Current (A)
0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
400
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP BOTTOM
300
Charge
IG ID
ID 3.6A 6.4A 8.0A
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
200
15V
100
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7468PBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255]
F OOTPRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF 7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IF IER LOGO
XXXX F7101
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7
IRF7468PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 5.0mH
RG = 25, IAS = 8.0A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
8
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