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 Preliminary
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm * High power gain Gp=14.5 dB(TYP.) @f=1.9GHz * High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
QUALITY
* GG
Fig.1
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=800 mA * Rg=100
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
(Ta=25C)
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=800mA VDS=10V,ID=800mA,f=1.9GHz Pin=23dBm VDS=10V,ID=800mA,f=1.9GHz Vf Method -1 -
Limits
Typ. 2400 -3 1000 36.5 50 14.5 2.6 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
Apr. 1999
MGF0915A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
40 35 30 Gp(dB),Po(dBm) 25
PAE VDS=10V ID=0.8A Po
80 70 60 50 40
Gp
f=1.9GHz
20 15 10 5 0 5 10 15 20 25 30 Pin(dBm)
30 20 10 0
IM3,Po(SCL) vs. Pi(SCL)
40 30 20 VD=10V ID=800mA f1=1.90GHz f2=1.91GHz Po 10 0 -10 -20 -30 -40 -50 -60 -70 -5 0 5 10 15 20 25
Po(SCL) (dBm)
10 0 -10 -20 -30 -40
IM3
Pi(SCL) (dBm)
Mitsubishi Electric Apr. 1999
IM3 (dBc)
PAE(%)
MGF0915A IM3,Po(SCL) vs. Pi(SCL)
60 Po(SCL) (dBm) 50 40 30 20 10 0 -10 -20 -30 -40 -50 IM3(dBc) -60 -70 -80 -10
VD=10V ID=800mA f1=1.90GHz f2=1.91GHz
Po
IM3
0
10
20
30
40
50
60
Pi(SCL) (dBm)
Mitsubishi Electric Apr. 1999
MGF0915A S PARAMETERS (Ta=25C, VDS=10V, ID=800mA)
f
(GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 Mag. 0.906 0.915 0.922 0.926 0.929 0.930 0.931 0.931 0.930 0.930 0.930 0.929 0.929 0.929 0.928 0.928 0.928 0.927 0.926 0.925 0.923 0.921 0.918 0.915 0.911 0.906 0.901 0.895 0.889 0.883 0.877 0.872 0.868 0.865
S11
Ang.(deg) -129.18 -143.13 -152.39 -158.38 -162.21 -164.73 -166.54 -168.03 -169.42 -170.81 -172.20 -173.50 -174.64 -175.53 -176.13 -176.47 -176.73 -177.21 -178.41 -181.06 179.19 178.21 177.12 175.87 174.44 172.81 170.97 168.92 166.67 164.26 161.72 159.11 156.49 153.95 Mag. 5.943 4.253 3.243 2.627 2.220 1.920 1.679 1.487 1.342 1.230 1.100 1.004 0.940 0.885 0.836 0.794 0.757 0.725 0.697 0.673 0.652 0.634 0.620 0.608 0.598 0.590 0.585 0.581 0.580 0.579 0.581 0.584 0.587 0.592
S21
Ang.(deg) 107.77 99.30 92.17 86.14 80.98 76.51 72.58 69.04 65.78 62.71 59.75 56.86 53.99 51.11 48.21 45.28 42.32 39.34 36.36 33.38 30.42 27.50 24.61 21.77 18.97 16.20 13.42 10.61 7.71 4.65 1.34 -2.32 -6.47 -11.26 Mag. 0.015 0.017 0.018 0.018 0.019 0.019 0.019 0.019 0.020 0.020 0.021 0.021 0.022 0.023 0.024 0.025 0.027 0.028 0.030 0.031 0.033 0.035 0.037 0.039 0.041 0.043 0.046 0.048 0.051 0.055 0.058 0.063 0.068 0.074
S12
Ang.(deg) 24.16 24.94 26.08 27.54 29.23 31.10 33.10 35.18 37.28 39.36 41.39 43.32 45.12 46.77 48.23 49.49 50.53 51.33 51.89 52.19 52.24 52.04 51.59 50.90 49.98 48.85 47.53 46.04 44.42 42.68 40.88 39.04 37.21 35.43 Mag. 0.649 0.653 0.657 0.660 0.663 0.666 0.669 0.673 0.676 0.680 0.684 0.689 0.694 0.699 0.704 0.709 0.714 0.718 0.722 0.726 0.729 0.731 0.732 0.732 0.732 0.730 0.728 0.724 0.720 0.715 0.710 0.705 0.700 0.696
S22
Ang.(deg) -174.10 -173.57 -172.97 -172.34 -171.69 -171.04 -170.40 -169.80 -169.24 -168.73 -168.30 -167.93 -167.65 -167.46 -167.37 -167.37 -167.46 -167.66 -167.95 -168.34 -168.82 -169.39 -170.04 -170.75 -171.53 -172.36 -173.22 -174.11 -175.00 -175.89 -176.75 -177.56 -178.30 -178.95
K
0.97 0.84 0.74 0.68 0.66 0.67 0.71 0.77 0.84 0.89 0.98 1.05 1.08 1.09 1.09 1.09 1.08 1.06 1.06 1.07 1.06 1.08 1.10 1.13 1.17 1.21 1.26 1.30 1.34 1.38 1.40 1.40 1.38 1.34
MSG/MAG
(dB) 25.84 24.04 22.64 21.58 20.76 20.06 19.43 18.84 18.33 17.86 17.26 15.33 14.59 14.00 13.53 13.15 12.84 12.56 12.24 11.76 11.42 10.93 10.37 9.78 9.18 8.60 8.03 7.51 7.03 6.60 6.23 5.93 5.70 5.55
Mitsubishi Electric
Apr. 1999


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