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Preliminary
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm * High power gain Gp=14.5 dB(TYP.) @f=1.9GHz * High power added efficiency hadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
QUALITY
* GG
Fig.1
* Ids=800 mA * Rg=100W
RECOMMENDED BIAS CONDITIONS
* Vds=10V
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=800mA VDS=10V,ID=800mA,f=1.9GHz Pin=23dBm VDS=10V,ID=800mA,f=1.9GHz DVf Method -1 -
Limits
Typ. 2400 -3 1000 36.5 50 14.5 2.6 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0915A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
40 35 30 Gp(dB),Po(dBm) 25
PAE
VDS=10V ID=0.8A
80
Po
70 60 50 40 PAE(%)
IM3 (dBc)
f=1.9GHz
20
Gp
15 10 5 0 5 10 15 20 25 30 Pin(dBm)
30 20 10 0
IM 3 ,P o (S C L ) vs. P i(S C L)
40 30 20 V D =10V ID =800m A f1=1.90G H z f2=1.91G H z Po 10 0 -10 -20 -30 -40 -50 -60 -70 -5 0 5 10 15 20 25
Po(SCL) (dBm)
10 0 -10 -20 -30 -40
IM 3
P i(S C L ) (d B m )
Mitsubishi Electric July 1999
MGF0915A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Ang(deg) -130.81 -145.25 -155.09 -161.66 -166.04 -169.13 -171.54 -173.64 -175.64 -177.65 -179.66 178.44 176.72 175.20 173.98 172.96 172.14 171.02 169.18 165.80 165.48 163.82 162.06 160.17 157.96 155.62 153.04 150.11 147.03 143.67 140.03 136.32 132.54 128.69
(Ta=25C, VDS=10V, ID=800mA, Reference Plane see Fig.1)
S21 S12 Ang(deg) 106.15 96.95 89.17 82.37 76.57 71.35 66.74 62.43 58.52 54.71 51.10 47.49 43.89 40.29 36.68 33.09 29.39 25.69 22.08 18.35 14.64 11.00 7.35 3.78 0.18 -3.46 -7.12 -10.84 -14.70 -18.80 -23.15 -27.84 -33.15 -39.08 Mag 0.015 0.017 0.018 0.018 0.019 0.019 0.019 0.019 0.020 0.020 0.021 0.021 0.022 0.023 0.024 0.025 0.027 0.028 0.030 0.031 0.033 0.035 0.037 0.040 0.042 0.044 0.048 0.050 0.054 0.058 0.062 0.068 0.074 0.082 Ang(deg) 22.55 22.55 23.07 23.77 24.77 25.95 27.24 28.63 30.02 31.41 32.70 33.89 34.99 35.99 36.68 37.29 37.59 37.69 37.58 37.15 36.44 35.50 34.35 32.88 31.18 29.24 26.98 24.56 22.00 19.30 16.45 13.46 10.55 7.62 Mag 0.649 0.653 0.657 0.660 0.663 0.667 0.670 0.674 0.678 0.682 0.686 0.692 0.697 0.702 0.707 0.712 0.717 0.721 0.724 0.728 0.730 0.732 0.732 0.731 0.730 0.727 0.723 0.718 0.713 0.706 0.699 0.693 0.686 0.681 S22 Ang(deg) -175.29 -175.36 -175.34 -175.22 -175.20 -175.08 -175.07 -175.06 -175.06 -175.16 -175.36 -175.57 -175.98 -176.38 -176.89 -177.50 -178.20 -179.00 -179.89 179.21 178.12 176.94 175.77 174.40 173.13 171.67 170.31 168.86 167.42 165.99 164.66 163.24 162.03 160.92 K 0.48 0.59 0.70 0.82 0.87 0.98 1.10 1.23 1.30 1.41 1.49 1.64 1.65 1.65 1.66 1.64 1.55 1.54 1.49 1.49 1.44 1.40 1.38 1.37 1.37 1.40 1.38 1.43 1.43 1.40 1.40 1.32 1.24 1.12 MSG/MAG (dB) 25.98 23.98 22.56 21.64 20.68 20.04 17.55 16.06 14.97 14.08 13.05 12.11 11.59 11.14 10.67 10.33 10.12 9.79 9.53 9.21 9.02 8.80 8.55 8.29 7.99 7.61 7.36 6.95 6.68 6.46 6.26 6.27 6.40 6.89
Mag 0.906 0.915 0.922 0.926 0.929 0.929 0.930 0.930 0.929 0.929 0.929 0.928 0.927 0.927 0.926 0.925 0.925 0.924 0.922 0.920 0.918 0.915 0.912 0.908 0.902 0.896 0.889 0.881 0.873 0.864 0.855 0.846 0.839 0.832
Mag 5.901 4.217 3.214 2.603 2.199 1.901 1.662 1.472 1.328 1.218 1.090 0.995 0.933 0.879 0.831 0.789 0.753 0.722 0.696 0.676 0.656 0.640 0.628 0.619 0.612 0.608 0.607 0.607 0.611 0.616 0.624 0.633 0.642 0.654
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 OU T LINE DR A W ING
Mitsubishi Electric July 1999
2.8

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