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| Technological Comparison Table between M5M51008B* and M5M5V108C Circuit Memory Cell Peripheral Circuit M5M51008B High Resistance Type CMOS M5M5V108C TFT Load Type CMOS Process Wafer Process Design Rule Gate Oxide Transistor Type Word Line Bit Line M5M51008B Triple Poly +Single Al 0.6m SiO2(10nm) LDD WSi Al M5M5V108C Quadruple Poly +Double Al 0.4m SiO2(10nm) LDD WSi Al Assembly Plastic Material Lead Frame Material Lead Frame Finish Wire Bond Material Die Bond Material M5M51008B Epoxy - resign Fe - Ni 42 alloy Sn/Pb Plating Au Soft Solder M5M5V108C Epoxy - resign Fe - Ni 42 alloy Sn/Pb Plating Au Resign Factory Wafer Process Assembly / Test M5M51008B KOCHI KUMAMOTO M5M5V108C KOCHI KUMAMOTO, CHINA * : -70/10/12/15VL,VLL Technological Comparison Table between M5M51008B** and M5M51008C Circuit Memory Cell Peripheral Circuit M5M51008B High Resistance Type CMOS M5M51008C TFT Load Type CMOS Process Wafer Process Design Rule Gate Oxide Transistor Type Word Line Bit Line M5M51008B Triple Poly +Single Al 0.6m SiO2(14nm) LDD WSi Al M5M51008C Quadruple Poly +Double Al 0.4m SiO2(12nm) LDD WSi Al Assembly Plastic Material Lead Frame Material Lead Frame Finish Wire Bond Material Die Bond Material M5M51008B Epoxy - resign Fe - Ni 42 alloy Sn/Pb Plating Au Soft Solder M5M51008C Epoxy - resign Fe - Ni 42 alloy Sn/Pb Plating Au Resign Factory Wafer Process Assembly / Test M5M51008B KOCHI KUMAMOTO M5M51008C KOCHI KUMAMOTO, CHINA ** : -55/70/10L,LL |
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