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AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130m. RDS (on), VGS@-2.5V, IDS@-2.0A =190m. Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information AX Feature F :MOSFET PN 2301P X X X Package W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Oct 12, 2004 1/5 AF2301P 20V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25C TA=70C Operating Junction Temperature Operating Junction and Storage Temperature Range Rating -20 8 -2.3 -10 1.25 0.8 +150 -55 to +150 Units V V A A W C C Thermal Performance Symbol TL RJA Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Limit 5 100 Units S C/W Note: Surface mounted on FR4 board t < 5 sec. Electrical Characteristics Rate ID=-2.3A, (TA=25oC unless otherwise noted) Symbol Static BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistance Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS= VGS, ID=-250uA VDS=-16V, VGS=0V VGS=8V, VDS=0V VDS=-5V, VGS=-10V VDS=-5V, ID=-2.8A VDS=-6V, ID=-2.8A, VGS=-4.5V VDD=-6V, RL=6, ID=-1A, VGEN=-4.5V, RG=6 VDS=-6V, VGS=0V, f=1.0MHz Min. -20 -0.45 -6 Limits Typ. 95 122 6.5 5.4 0.8 1.1 5 19 95 65 447 127 80 -0.8 Max. 130 190 -1.0 100 10 25 60 110 80 -1.6 -1.2 Unit V m V uA nA A S VGS(TH) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage ID(ON) On-State Drain Current gfs Forward Tranconductance Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Diode IS Max. Diode Forward Current VSD Diode Forward Voltage Note: Pulse test: pulse width < 300uS, duty cycle < 2% nC nS pF IS=-1.6A, VGS=0V A V Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.2 Oct 12, 2004 AF2301P 20V P-Channel Enhancement Mode MOSFET Typical Performance Characteristics (Ta=25oC unless otherwise noted) Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.2 Oct 12, 2004 AF2301P 20V P-Channel Enhancement Mode MOSFET Typical Performance Characteristics (Continued) (Ta=25oC unless otherwise noted) Switching Test Circuit VDD RL VIN S VOUT VGS RGEN G OUT D Switching Waveforms ton td(on) tr 90% td(off) toff 90% tf Output, VOUT 10% 10% 90% 50% Input, VIN 10% PULSE WIDTH INVERTED 50% Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.2 Oct 12, 2004 AF2301P 20V P-Channel Enhancement Mode MOSFET Marking Information (Top View) SOT23 XX YW Appendix XX: Device Code (See Appendix) Date code Y : Year W : Week(A~Z) Part Number AF2301P Package Device Code SOT23-3 01 Package Information e D A2 A HE E b Symbol A A1 A2 b C D E e HE L Dimensions In Millimeters Min. 1.00 0.00 1.00 0.35 0.10 2.70 1.40 1.70 2.40 0.30 Nom. 1.20 1.15 0.175 2.90 1.60 2.00 2.70 Max. 1.40 0.10 1.30 0.50 0.25 3.10 1.80 2.30 3.00 0.55 A1 C L Dimensions In Inches Min. 0.039 0.000 0.039 0.014 0.004 0.106 0.055 0.067 0.094 0.012 Nom. 0.047 0.045 0.007 0.114 0.063 0.079 0.106 Max. 0.055 0.004 0.051 0.020 0.010 0.122 0.071 0.091 0.118 0.022 Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.2 Oct 12, 2004 This datasheet has been download from: www..com Datasheets for electronics components. |
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