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| Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against reverse current I Features * Mini type 3-pin package * High breakdown voltage VR = 100 V 2.8 0.65 0.15 + 0.2 - 0.3 1.5 - 0.05 + 0.25 0.65 0.15 0.95 2.9 - 0.05 1.9 0.2 1 3 2 + 0.2 0.95 1.45 + 0.2 - 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current* Average forward current Junction temperature Storage temperature Symbol VR VRM IFSM IF(AV) Tj Tstg Rating 100 100 1.5 300 125 -55 to +150 Unit V V A mA C C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M5K Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 100 V IF = 300 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 0.50 100 7 Conditions Min Typ Max 200 0.58 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 1. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.4 0.2 1.1 0.8 0.16 - 0.06 I Absolute Maximum Ratings Ta = 25C + 0.1 0.4 - 0.05 + 0.1 1 MA3XD17 IF V F 10 1 Schottky Barrier Diodes (SBD) IR V R 100 Ct VR 1 75C 25C Terminal capacitance Ct (pF) 10-1 Forward current IF (A) 10-1 - 20C Reverse current IR (A) Ta = 125C Ta = 125C 10-2 75C 10-3 80 60 10-2 10-3 40 10-4 25C 10-4 10-5 20 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) 2 |
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