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| Ordering number : ENN7297 MCH6406 N-Channl Silicon MOSFET MCH6406 Ultrahigh-Speed Switching Applications Preliminary Features * * * Package Dimensions unit : mm 2193A [MCH6406] 0.25 0.3 4 5 6 0.15 Low ON-resistance. Ultrahigh-speed switcing. 4V drive. 2.1 1.6 0.25 32 0.65 2.0 0.07 1 6 5 4 (Bottom view) Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 Unit 30 20 5 20 1.5 150 --55 to +150 V V A A W C C 0.85 1 2 3 (Top view) Ratings Mounted on a ceramic board(900mm2!0.8mm) Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=10V ID=1.2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 10 1.2 2.8 4 37 63 370 85 47 48 88 2.6 typ max Unit V A A V S m m pF pF pF Marking : KF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002 TS IM TA-100190 No.7297-1/4 MCH6406 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 Ratings min typ 11 12 32 18 8.5 1.8 1.3 0.86 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 10V 0V VIN ID=2.5A RL=6 VDD=15V D PW=10s D.C.1% VOUT G MCH6406 P.G 50 S 5 ID -- VDS V 10 ID -- VGS VDS=10V V 3.5 10V 4.0 0V 4 8.0V 6.0V 3. 9 Drain Current, ID -- A Drain Current, ID -- A 2.5V 8 7 6 5 4 3 2 5C Ta= 7 0 0.5 1.0 1.5 2.0 VGS=2.0V 1 1 0 0 0 0.2 0.4 0.6 0.8 1.0 IT05180 100 25 C 2 2.5 --25 3.0 3.5 3 C 4.0 Drain-to-Source Voltage, VDS -- V 200 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT05181 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 80 150 60 1. I D= =4.0 , VGS 2A V 100 40 .5A I D=2 =10V , VGS 50 ID=2.5A ID=1.2A 20 0 2 3 4 5 6 7 8 9 10 IT05182 0 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- C IT05183 No.7297-2/4 MCH6406 Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 IT05184 yfs -- ID VDS=10V Forward Drain Current, IF -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 IF -- VSD VGS=0 C Ta= 25 --2 5 C C 75 Ta= 7 0.4 5C 25 C --25 C 0.6 0.8 1.0 1.2 IT05185 Drain Current, ID -- A 2 SW Time -- ID 1000 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=15V VGS=10V Switching Time, SW Time -- ns 100 7 5 7 5 Ciss, Coss, Crss -- pF 3 2 td (off) 3 2 100 7 5 3 2 Coss Crss tf 10 7 0.1 2 3 5 7 tr td(on) 1.0 2 3 5 7 10 2 IT05186 10 0 5 10 15 20 25 30 IT05187 Drain Current, ID -- A 10 VGS -- Qg Drain-to-Source Voltage, VDS -- V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=5A 8 IDP=20A ID=5A Drain Current, ID -- A 10 <10s 10 0 1m ms s ms 6 DC 10 op 0m s n era 4 tio Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 2 0 0 1 2 3 4 5 6 7 8 9 0.01 0.01 Total Gate Charge, Qg -- nC 2.0 IT05188 PD -- Ta Drain-to-Source Voltage, VDS -- V IT05189 Allowable Power Dissipation, PD -- W 1.5 M ou nte do na 1.0 ce ram ic bo ard (9 00 0.5 mm 2 !0 .8m m) 140 160 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C IT05190 No.7297-3/4 MCH6406 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7297-4/4 |
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