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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors Features: D Built-In Bias Resistor (R1 = 47k, R2 = 47k) D Small-Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +160C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain Gain Band-width Product NTE2359 NTE2360 Output Capacitance NTE2359 NTE2360 Cob VCB = 10V, f = 1MHz - - 3.7 5.5 - - pF pF IEBO hFE fT Test Conditions VCB = 40V, IE = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 5mA VCE = 10V, IC = 5mA - - 250 200 - - MHz MHz Min - - 30 50 Typ - - 53 - Max 0.1 0.5 80 - Unit A A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Symbol VCE(sat) Test Conditions IC = 5mA, IB = 0.25mA Min - 50 50 0.8 1.0 32 0.9 Typ 0.1 - - 1.1 2.5 47 1.0 Max 0.3 - - 1.5 5.0 62 1.1 Unit V V V V V k V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 100A, RBE = VI(off) VI(on) R1 R1/R2 VCE = 5V, IC = 100A VCE = 200mV, IC = 5mA Schematic Diagram Collector (Output) Collector (Output) R1 Base (Input) R2 Base (Input) R1 R2 Emitter (GND) Emitter (GND) NPN .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max PNP ECB .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max |
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