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| PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) 3.2V @VGE = 15V, I C = 33A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 59 33 120 120 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) Revision 0 C-611 IRGP450U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V (BR)CES /TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.41 -- V/C VGE = 0V, I C = 1.0mA -- 2.1 3.2 IC = 33A V GE = 15V -- 2.6 -- V IC = 59A See Fig. 2, 5 -- 2.1 -- IC = 33A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 7.2 2.1 -- S VCE = 100V, I C = 33A -- -- 250 A VGE = 0V, V CE = 500V -- -- 2000 VGE = 0V, V CE = 500V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 120 22 41 33 26 110 91 0.73 0.25 0.98 31 29 160 110 1.4 13 2700 280 34 Max. Units Conditions 180 IC = 33A 33 nC VCC = 400V See Fig. 8 62 VGE = 15V -- TJ = 25C -- ns IC = 33A, V CC = 400V 170 VGE = 15V, R G = 5.0 140 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 1.5 -- TJ = 150C, -- ns IC = 33A, V CC = 400V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-612 IRGP450U 100 F o r b o th : T riang ular w av e: 80 LO A D C U R R E N T (A ) D uty cycle: 50 % TJ = 1 25C T sink = 9 0C G ate d rive as spe cified P ow er D issipatio n = 40W C lam p v oltag e: 80% o f rated 60 S qua re w a v e: 60% of rated voltage 40 20 Id e a l d io d e s 0 0.1 1 10 100 f, F req uency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 I C , C ollector-to-E m itter Current (A ) 100 TJ = 2 5C TJ = 1 5 0C IC , C ollector-to-E m itte r C urrent (A ) 100 TJ = 15 0C TJ = 25 C 10 10 1 1 V G E = 15 V 20 u S P U L S E W ID T H 10 1 5 10 V C C = 1 00 V 5 u S P U L S E W ID T H 15 20 V C E , C ollector-to-Em itter V oltage (V) V G E , G a te-to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-613 IRGP450U 60 V G E = 1 5V 3.5 V C E , C ollector-to-E m itter Vo ltage (V ) V G E = 1 5V 8 0 uS P U LS E W ID T H I C = 6 6A M axim um D C C ollector Current (A ) 50 3.0 40 2.5 30 2.0 I C = 3 3A 20 1.5 10 I C = 17A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem p erature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herma l R espo nse (Z th JC ) D = 0.5 0 0.2 0 0.1 0.1 0 0 .0 5 SIN G LE P U LSE (TH ER MA L R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.02 0.01 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0 001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-614 IRGP450U 6 00 0 V G E , G ate-to-E m itter Volta ge (V ) V GE = C ie s = C re s = C oe s= 0V , f = 1M Hz C g e + C gc , C ce SH O R TE D C gc C ce + C gc 20 V C E = 4 00 V I C = 3 3A 16 C , C a pa citan ce (pF ) 4 00 0 C ies C oes 12 8 2 00 0 C res 4 0 1 10 100 0 0 30 60 90 120 V C E , C ollector-to-Em itter Voltage (V ) Q G , Total G a te C ha rge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2 .2 0 2 .0 0 T otal S w itchin g Lo sses (m J) 1 .8 0 To tal S witc hing Losses (m J) V C C = 4 00 V V G E = 1 5V T C = 2 5C I C = 33 A 10 I C = 66 A 1 .6 0 I C = 33 A 1 1 .4 0 I C = 1 7A 1 .2 0 1 .0 0 0 .8 0 0 10 20 30 40 50 60 0.1 RG = 5 V G E = 1 5V V C C = 4 00 V -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R esis tance ( ) W TC , C ase Tem p erature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-615 IRGP450U 5.0 Total S w itching Losses (m J) 4.0 3.0 To tal S witc hing Losses (m J) RG = 5 T C = 1 5 0C V C C = 4 0 0V V G E = 15V 10 I C = 6 6A I C = 3 3A 1 2.0 I C = 1 7A 1.0 0.0 0 20 40 60 80 0.1 RG = 5 V G E = 15 V V C C = 40 0 V -60 -40 -20 0 20 40 60 80 100 120 140 160 I C , C ollec tor-to-Em itter C urren t (A ) TC , C a se T em perature (C ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13 C-616 |
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