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| PD - 9.1136 IRGPC20M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, VGE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) 2.3V @VGE = 15V, IC = 8.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 13 8.0 26 26 10 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 2.1 -----40 ------ Units C/W g (oz) IRGPC20M Electrical Characteristics @ T J = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 ------V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 20 ------V VGE = 0V, IC = 1.0A V(BR)CES/T J Temperature Coeff. of Breakdown Voltage ---- 0.42 ---V/C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage ---2.0 2.3 IC = 8.0A VGE = 15V VCE(on) ---2.7 ---V IC = 13A See Fig. 2, 5 ---2.5 ---IC = 8.0A, TJ = 150C VGE(th) Gate Threshold Voltage 3.0 ---5.5 VCE = VGE , IC = 250A VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/C V CE = VGE , IC = 250A Forward Transconductance 2.7 3.8 ---S VCE = 100V, IC = 8.0A gfe I CES Zero Gate Voltage Collector Current ------- 250 A V GE = 0V, VCE = 600V ------- 1000 VGE = 0V, VCE = 600V, TJ = 150C I GES Gate-to-Emitter Leakage Current ------- 100 nA VGE = 20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ------------------------------10 ---------------------------Typ. Max. Units Conditions 16 24 IC = 8.0A 3.6 5.2 nC VCC = 400V See Fig. 8 6.0 9.0 VGE = 15V 29 ---TJ = 25C 22 ---ns IC = 8.0A, VCC = 480V 270 400 VGE = 15V, RG = 50 280 510 Energy losses include "tail" 0.14 ---0.86 ---mJ See Fig. 9, 10, 11, 14 1.0 2.0 ------s VCC = 360V, TJ = 125C VGE = 15V, RG = 50, VCPK < 500V 27 ---TJ = 150C, 21 ---ns IC = 8.0A, VCC = 480V 370 ---VGE = 15V, RG = 50 420 ---Energy losses include "tail" 1.4 ---mJ See Fig. 10, 14 13 ---nH Measured 5mm from package 365 ---VGE = 0V 47 ---pF VCC = 30V See Fig. 7 4.8 --- = 1.0MHz Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC=80%(VCES), VGE=20V, L=10H, RG= 50, ( See fig. 13a ) Pulse width 80s; duty factor 0.1%. IRGPC20M 20 F or both: Triangular wave: 16 Load Current (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 15W Clamp voltage: 80% of rated 12 Square wave: 60% of rated voltage 8 4 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK ) 100 100 T = 25C J TJ = 150C 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGPC20M 14 12 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 5.0 VGE = 15V 80s PULSE WIDTH I C = 16A 4.0 10 8 3.0 6 2.0 I C = 8.0A I C = 4.0A 4 1.0 2 0 25 50 75 100 125 A 150 0.0 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM 0.1 0.02 0.01 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 1 t2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRGPC20M 600 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = C ce + C gc 20 VCE = 400V I C = 8.0A 16 C, Capacitance (pF) C ies 400 12 C oes 8 200 4 Cres 0 1 10 0 0 4 8 12 16 A 20 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.900 0.896 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 480V VGE = 15V TC = 25C I C = 8.0A 10 RG = 50 V GE = 15V V CC = 480V I C = 16A 0.892 I C = 8.0A 1 0.888 I C = 4.0A 0.884 0.880 10 20 30 40 50 60 0.1 -60 -40 -20 A 0 20 40 60 80 100 120 140 160 R G , Gate Resistance ( ) W TC, Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGPC20M 4.0 3.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 50 T C = 150C VCC = 480V VGE = 15V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 10 2.0 1.0 0.0 0 4 8 12 16 A 20 1 1 10 100 A 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 15.90 ( .626) 15.30 ( .602) -B- 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) -D- 5.30 ( .209) 4.70 ( .185) 2.50 (.089) 1.50 (.059) 4 NO TES: 1 DIMENSIO NS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIO NS ARE SHOW N MILLIMETE RS (INCHES). 4 CONFO RM S TO JEDEC OUTLINE TO-247AC. LEAD ASSIGNMENTS 1 - GATE 2 - CO LLECTO R 3 - EMITTER 4 - CO LLECTO R * LO NGE R LEADED (20m m) VERS ION AVAILAB LE (TO-247AD) TO ORDE R ADD "-E " SUFFIX TO PART NUMBER 20.30 (.800) 19.70 (.775) 1 2X 5.50 (.217) 4.50 (.177) 2 3 -C- * 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 ( .215) 2X 4.30 (.170) 3.70 (.145) 1.40 (.056) 1.00 (.039) 0.25 ( .010) M 0.80 ( .031) 3X 3X 0.40 ( .016) CA S 3.40 (.133) 3.00 (.118) 2.60 (.102) 2.20 (.087) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IRGPC20M L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X IC@25C 480F 960V Q R * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q 1000V R S Q R 90% S VC 90% 10% Fig. 14b - Switching Loss Waveforms t d(off) 10% I C 5% t d(on) tr Eon Ets = (Eon +Eoff ) tf t=5s Eoff |
Price & Availability of 1968
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