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  Datasheet File OCR Text:
 ADE-208-297(Z)
1SS118 Silicon Epitaxial Planar Diode for High Speed Switching
Rev. 0 Dec. 1994 Features
* High average forward current. (I o=200mA) * High reliability with glass seal.
S1 18
Outline
1
2
Ordering Information
Type No. Cathode band 1SS118 Black Mark Package Code S118 Do-35
Type No. Cathode band 1. Cathode 2. Anode
Absolute Maximum Ratings ** (Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current
Non-Repetitive peak forward surge current
Average forward current Power dissipation Junction temperature Storage temperature * Value at duration of 1s
Symbol VRM VR IFM IFSM * Io Pd Tj Tstg
Value 75 50 600 4 200 500 175 -65 to +175
Unit V V mA A mA mW C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol Min VF IR C trr -- -- -- -- Typ -- -- -- -- Max 1.0 0.1 3.5 3.0 Unit V A pF ns Test Condition IF = 100 mA VR = 50 V VR = 0 V, f = 1 MHz IF=10mA, VR=6V, Irr=0.1IR RL=50
1SS118
10
-1
10
-4
(A)
Reverse current I R (A)
Ta=125C 10
-5
Forward current I F
10
-2
Ta= 125 C Ta= 75C Ta= 25C Ta=25C
10
-3
10
-6
Ta=75C
10
-4
10 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2
-7
0
30 10 20 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
50
Fig.1 Forward current Vs. Forward voltage
3.0 f=1MHz 2.5 (pF) C Capacitance 1.5 1.0 0.5 0
2.0
0
10
20
30
40
50
60
Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage
1SS118
Package Dimensions
Unit: mm
26.0 Min
4.2 Max
26.0 Min 2.0 Max
0.5
1
S1 18 Type No. (Black) Cathode band (Black)
2
1 Cathode 2 Anode
HITACHI Code JEDEC Code EIAJ Code Weight (g)
DO-35 DO-35 SC-48 0.13


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