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PD - 91447B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si) RDS(on) 0.045 0.045 ID -48A -48A
IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655
RAD-Hard HEXFET TECHNOLOGY
TM (R)
QPL Part Number JANSR2N7424U JANSF2N7424U
International Rectifier's RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-2
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page -48 -30 -192 300 2.4 20 500 -48 30 -4.4 -55 to 150 300 (for 5 Sec.) 3.3 (typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
1/22/02
IRHNA9064
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-60 -- -- -- -2.0 18 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.055 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- V V/C
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -30A VGS = -12V, ID = -48A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -30A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -48A VDS = -30V VDD = -30V, ID = -48A, VGS =-12V, RG = 2.35
0.045 0.048 -4.0 V -- S( ) -25 A -250 -100 100 300 70 91 35 150 200 200 --
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6700 2800 920
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -48 -192 -3.0 270 2.5
Test Conditions
A
V nS C
Tj = 25C, IS = -48A, VGS = 0V Tj = 25C, IF = -48A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 1.6 0.42 C/W --
Test Conditions
Soldered to a 1" square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA9064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-48V, VGS =0V VGS = -12V, ID =-30A VGS = -12V, ID =-30A VGS = 0V, IS = -48A
Min -60 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 -25 0.045 0.045 -3.0
Min -60 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.045 0.045 - 3.0
1. Part number IRHNA9064 (JANSR2N7424U) 2. Part number IRHNA93064 (JANSF2N7424U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
LE T MeV/(mg/cm)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (m) @VGS=0V Cu Br I 43 39 32.8 -60 -55 -40 @VGS=5V -60 -45 -35 VD S(V) @VGS=10V -50 -35 -- @VGS=15V -35 -30 -- @VGS=20V -- -- --
Ion
-80 -60 Cu VDS -40 -20 0 0 5 10 VGS 15 20 25 Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA9064
Pre-Irradiation
1000
-I D , Drain-to-Source Current (A)
100
-5.0V
20s PULSE WIDTH T = 25 C
J 1 10 100
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
20s PULSE WIDTH T = 150 C
J 1 10 100
10 0.1
10 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -48A
-I D , Drain-to-Source Current (A)
3.0
2.5
TJ = 25 C TJ = 150 C
2.0
100
1.5
1.0
10 5 6 7 8
V DS = -25V 20s PULSE WIDTH 10 11 9 12
0.5
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
IRHNA9064
12000
10000
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = -48A
16
VDS = -48V VDS = -30V
8000
Ciss
12
6000
4000
C oss
8
2000
C rss
1 10 100
4
0
0 0 50 100 150
FOR TEST CIRCUIT SEE FIGURE 13
200 250 300 350
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ID , Drain Current (A) I
100
TJ = 150 C
100
100us
1ms 10ms
TJ = 25 C
10
10
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA9064
Pre-Irradiation
50
V DS VGS
RD
40
D.U.T.
+
-ID , Drain Current (A)
30
VGS Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VGS 10%
td(on) tr t d(off) tf
0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
RG
V DD
Pre-Irradiation
IRHNA9064
VDS
L
1400
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T
IA S
VD D A D R IV E R
1200
-20V VGS
tp
0.0 1
1000
ID -21A -30A BOTTOM -48A TOP
800
15V
600
400 200
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHNA9064
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=0.43mH Peak IL = -48A, VGS =-12V ISD -48A, di/dt -150A/s, VDD -60V, TJ 150C
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 1/02
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