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PD - 9.1357A
PRELIMINARY
IRLZ24N
HEXFET(R) Power MOSFET
D
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 55V
G S
RDS(on) = 0.06 ID = 18A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
18 13 72 45 0.30 16 68 11 4.5 4.6 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.50 ----
Max.
3.3 ---- 62
Units
C/W
11/6/96
IRLZ24N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 55 --- --- --- --- 1.0 8.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.061 --- --- --- --- --- --- --- --- --- --- --- --- 7.1 74 20 29
Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.060 VGS = 10V, ID = 11A 0.075 VGS = 5.0V, I D = 11A 0.105 VGS = 4.0V, I D = 9.0A 2.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 11A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 VGS = -16V 15 ID = 11A 3.7 nC VDS = 44V 8.5 V GS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- I D = 11A ns --- RG = 12, VGS = 5.0V --- RD = 2.4, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 480 --- VGS = 0V 130 --- pF VDS = 25V 61 --- = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 18 showing the A G integral reverse --- --- 72 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 11A, VGS = 0V --- 60 90 ns TJ = 25C, IF = 11A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Specification changes
Rev. #
1 Notes:
Parameters Old spec.
VGS (Max.) 20
New spec.
16
Comments
Decrease VGS ( Max). Specification
Revision Date
4/29/96
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 790H RG = 25, IAS = 11A. (See Figure 12)
I SD 11A, di/dt 290A/s, VDD V(BR)DSS , Pulse width 300s; duty cycle 2%.
TJ 175C
IRLZ24N
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
ID , D ra in -to -S o u rce C u rre n t (A )
10
ID , D ra in -to -S o u rce C u rre n t (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP
10
2 .5V
1
1
2.5V 2 0 s PU L SE W ID TH T J = 2 5C
0.1 1 10
0.1
A
0.1 0.1 1
20 s PU LSE W ID TH T J = 1 75C
10
100
A
100
V D S , Drain-to-S ource Voltage (V )
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
T J = 2 5 C
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 1 8A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
T J = 1 7 5 C
10
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS = 1 5 V 2 0 s P U L SE W ID TH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLZ24N
800
V G S , G a te -to -S o u rce V o lta g e (V )
C , C a p a c ita n c e (p F )
600
C i ss
V GS C is s C rss C oss
= 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd
15
I D = 11A V DS = 4 4V V DS = 2 8V
12
9
400
C o ss
6
200
C rs s
3
0 1 10 100
A
0 0 4 8
FO R TEST CIR CU IT SEE FIG UR E 13
12 16 20
A
V D S , D rain-to-S ource Voltage (V )
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
I D , D ra in C u rre n t (A )
100 10 s
T J = 1 75 C T J = 25 C
10
10
100 s
1 0.4 0.8 1.2 1.6
VGS = 0 V
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10
1m s 10m s 100
A
2.0
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLZ24N
20
VDS
16
RD
VGS RG
ID , D ra in C u rre n t (A m p s )
D.U.T.
+
-VDD
12
5.0V
Pulse Width 1 s Duty Factor 0.1 % 8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
A
175
TC , C ase T em perature (C )
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Therm al Response (Z th JC )
D = 0.5 0 1 0 .2 0 0 .1 0 0.05 0 .0 2 0.01 0.1 S IN G L E P U L S E ( TH E RM A L RE S P O N S E )
N o te s : 1 . D u ty fa c to r D = t PD M
t
1 t2
1
/t
2
0.01 0.00001
2 . P ea k TJ = P D M x Z th J C + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , Re ctangular Pulse Du ration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ24N
VDS D.U.T. RG + V - DD
5.0 V
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
140
TO P
120
BO TTO M
100
ID 4 .5A 7.8A 11 A
IAS tp
0.01
80
60
Fig 12a. Unclamped Inductive Test Circuit
40
20
V(BR)DSS tp VDD VDS
0 25
VD D = 2 5V
50 75 100 125 150
A
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLZ24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLZ24N
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) -A6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )
4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN
1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )
4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M BA M
3X
0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 )
2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB E X AM PL E : T H IS I S A N IR F1 010 W IT H A S S E MB LY L OT CO D E 9 B1M
A
I NT E RN A TIO N AL R E C TIF IE R LOG O A SS E MB LY LOT C OD E
P AR T NU M BE R IRF 10 10 9246 9B 1 M
D A TE C OD E (Y YW W ) Y Y = YE A R W W = W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/96

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