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Data Sheet No. PD 60069-H (NOTE: For new designs, we recommend IR's new products IPS021 and IPS021L)
IRSF3031
FULLY PROTECTED POWER MOSFET SWITCH
Features
* * * * * * * * *
Controlled slew rate reduces EMI Over temperature protection Over current protection Active drain-to-source clamp ESD protection Lead compatible with standard Power MOSFET Low operating input current Monolithic construction Dual set/reset threshold input
Product Summary V ds(clamp) Rds(on) Ids(sd) Tj(sd) E AS Applications 50 V 200 m 4A 165oC 200 mJ
Description
The IRSF3031 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset input threshold . The on-chip protection circuit latches off the Power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature exceeds 165oC (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain to source voltage is actively clamped at 55V prior to the avalanche of the Power MOSFET, thus improving its performance during turn-off with inductive loads. The input requirements are very low (100A typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.
* Solenoid Driver * DC Motor Driver * Programmable Logic Controller
Packages
3 Lead SOT-223
3 Lead TO220AB
Drain DRAIN
Block Diagram
Bias & Ref
Input INPUT
3.5V + 1V
+
S R Q Q
-
+
Vref
+ Ground Isolation Tj
Source SOURCE
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IRSF3031
Absolute Maximum Ratings
Symbol Parameter
Vds, max Continuous drain to source voltage Vin, max Ids Pd EAS Vesd1 Vesd2 T Jop T Stg TL Continuous input voltage Continuous drain current Power dissipation Unclamped single pulse inductive energy Electrostatic discharge voltage (Human Body Model) Electrostatic discharge voltage (Machine Model) Operating junction temperature range Storage temperature range Lead temperature (soldering, 10 seconds)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25oC unless otherwise specified.)
Min.
-- -0.3 -- -- -- -- -- -- -55 -55 --
Max.
50 10
self limited
Units Test Conditions
V A W W mJ V 100pF. 1.5k 200pF, 0
o
30 3.0 200 4000 1000 150 150 300
Tc Tc

25oC, TO220 25oC, SOT223
C
Static Electrical Characteristics
(Tc = 25oC unless otherwise specified.)
Symbol Parameter
V ds,clamp R ds(on) I dss V set V reset I i,on I i,off V in, clamp V sd Drain to source clamp voltage Drain to source on resistance Drain to source leakage current Input threshold voltage Input protection reset threshold voltage Input supply current (normal operation) Input supply current (protection mode) Input clamp voltage Body-drain diode forward drop
Min.
50 -- -- 2.5 0.5 -- -- 9 --
Typ.
56 155 -- 3.2 1.0 100 120 10 1.5
Max. Units Test Conditions
65 200 250 4.0 1.5 300 400 -- -- V m A V V A A V V Ids = 2A Vin = 5V, Ids = 2A Vds = 40V, Vin = 0V Vds = 5V, Ids > 10mA Vds = 5V, Ids < 10A Vin = 5V Vin = 5V Iin = 1mA Ids = -2A, R in = 1k
Thermal Characteristics
Symbol Parameter
R thjc R thja R thjc R thja Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Thermal resistance, junction-to-case Thermal resistance, junction-to-PCB
Min.
-- -- -- --
Typ.
-- -- -- --
Max. Units Test Conditions
4 60 40 60
o
C/W C/W
TO-220AB SOT-223
o
NOTES: x When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
y EAS is tested with a constant current source of 6A applied for 700S with Vin = 0V and starting Tj = 25oC. z Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is
forward biased.
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IRSF3031
Switching ElectricalCharacteristics
(VCC = 14V, resistive load (RL) = 10, Rin= 100. Specifications measured at TC= 25oC unless otherwise specified.)
Symbol Parameter
t don tr t doff tr SR SR Turn-on delay time Rise time Turn-off delay time Fall time Output positive slew rate Output negative slew rate
Min.
-- -- -- -- -6 -6
Typ.
-- -- -- -- -- --
Max. Units Test Conditions
30 30 30 30 6 6 s Vin = 2V to 5V, 50% to 90% Vin = 2V to 5V, 90% to 10% Vin = 5V to 2V, 50% to 10% Vin = 5V to 2V, 10% to 90% Vin = 2V to 5V, +dVds/dt Vin = 5V to 2V, -dVds/dt
V/s
Protection Characteristics
(TC= 25oC unless otherwise specified.
Symbol Parameter
I ds(sd) T j(sd) V protect t Iresp I peak t reset t Tresp Current limit Over temperature shutdown threshold Min. input voltage for over-temp function Over current response time Peak short circuit current Protection reset time Over-temperature response time
Min.
1.8 155 -- -- -- -- --
Typ.
4 165 3 TBD TBD TBD TBD
Max. Units Test Conditions
6 -- -- -- -- -- --
o
A C V s A
Vin = 5V Vin = 5V, Ids = 2A
s
Lead Assignments
2 (D)
(2) D
1 In
2 D
3 S 123 In D S
3 Lead - SOT223 IRSF3031L
3 Lead - TO220 IRSF3031
Part Number
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IRSF3031
Case Outline - SOT-223
(TO-261AA) 01-0022 05
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IRSF3031
Tape & Reel - SOT223
01-0028 05 / 01-0008 02
Case Outline 3 Lead - TO220
NOTES:
2X
IRGB 01-3026 01
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 4/11/2000
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