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| Bulletin I25168 rev. C 04/00 ST380C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability 960A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical case style TO-200AB (E-PUK) Units A C A C A A KA2s KA2s V s C ST380C..C 960 55 1900 25 15000 15700 1130 1030 400 to 600 100 - 40 to 125 www.irf.com 1 ST380C..C Series Bulletin I25168 rev. C 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 ST380C..C 06 600 700 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 VRSM , maximum nonrepetitive peak voltage V 500 I DRM /I RRM max. @ TJ = TJ max mA 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST380C..C 960 (440) 55 (75) 1900 15000 15700 12600 13200 Units Conditions A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I2t for fusing 1130 1030 800 725 I 2 t Maximum I2t for fusing 11300 0.85 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.88 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.24 1.60 600 mA 1000 T J = 25 C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 3000A, TJ = TJ max, t = 10ms sine pulse pk p 0.25 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST380C..C 1000 1.0 Units Conditions A/s Gate drive 20V, 20, t 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s g r Typical delay time Typical turn-off time s tq 100 V = 0.67% VDRM, TJ = 25C d ITM = 550A, TJ = T J max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p 2 www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST380C..C 500 50 Units Conditions V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST380C..C 10.0 2.0 3.0 20 Units Conditions W A T J = TJ max, t 5ms p PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1 T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms p V 5.0 MAX. 200 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ T stg ST380C..C -40 to 125 -40 to 150 0.09 0.04 0.02 0.01 9800 (1000) Units C Conditions Max. operating temperature range Max. storage temperature range RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10% DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table K/W wt Approximate weight Case style 83 TO - 200AB (E-PUK) www.irf.com 3 ST380C..C Series Bulletin I25168 rev. C 04/00 RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Single Side Double Side 0.010 0.012 0.015 0.022 0.036 0.011 0.012 0.015 0.022 0.036 Rectangular conduction Single Side Double Side 0.007 0.012 0.016 0.023 0.036 0.007 0.013 0.017 0.023 0.037 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 1 38 2 0 3 C 4 06 5 C 6 1 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (E-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection) 4 www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25 5 Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 28 (1.10) M axim um Allowable Heatsin k Tem perature (C) M a x im u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C ) 130 120 110 100 90 80 70 60 50 40 0 100 200 ST380C..C Series (Single Side Cooled) R th J-hs (DC) = 0.09 K/W 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 20 0 30 60 ST 3 8 0 C ..C Se rie s (Sin g le S id e C o o le d ) R t hJ-hs(D C ) = 0 .0 9 K / W Co n duc tion An gle C o ndu c tio n Pe rio d 30 60 90 120 180 90 120 180 DC 1 00 0 1 20 0 300 400 500 600 700 4 00 60 0 8 00 Average On -state Curren t (A) Fig. 1 - Current Ratings Characteristics A v e ra ge O n - sta t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST380C..C Series Bulletin I25168 rev. C 04/00 M ax im u m A llo w a b le H e a ts in k T e m pe r a tu re (C ) 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 20 0 4 00 600 80 0 10 0 0 1 2 00 1 4 00 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics C o ndu ctio n A ng le M a x im u m A llo w a b le H e at sin k T e m p e ra t u re (C ) ST 3 8 0 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-h s(D C ) = 0 .0 4 K / W 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 400 30 60 ST 3 8 0 C ..C Se rie s (D o u b le Sid e C o o le d ) R th J-hs(D C ) = 0 .0 4 K / W C on duc tio n Pe rio d 3 0 6 0 90 120 180 90 12 0 1 80 DC 80 0 1 20 0 1 6 00 2 00 0 A v e r a ge O n - st a t e C u rre n t (A ) Fig. 4 - Current Ratings Characteristics M a x im um A v e ra g e O n -st a te P o w e r L os s (W ) Maximu m Average On -state Power Loss (W) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average O n-sta te Current (A) Fig. 5- On-state Power Loss Characteristics C o nduc tio n A ng le 2 80 0 2 40 0 2 00 0 1 60 0 R M S Lim it 1 20 0 800 400 0 0 400 80 0 1 20 0 1 6 00 2 00 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 6- On-state Power Loss Characteristics Co n du ction Pe rio d 180 120 90 60 30 RM S Limit DC 180 120 90 60 30 ST 380C..C Series T J = 125C S T 3 8 0 C ..C Se rie s TJ = 125 C P e a k Ha lf Sin e W a v e O n -sta t e C u rre n t (A ) 1 3 00 0 1 2 00 0 1 1 00 0 1 0 00 0 90 0 0 80 0 0 70 0 0 60 0 0 1 A t A n y R a t e d Lo a d C o n d itio n A n d W it h Ra t e d V R RM A p p lie d F o llo w in g Su rg e . Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A ) 1 4 00 0 15000 14000 M a xim u m N o n R e p e tit iv e Su rg e C u rre n t V e rsu s P u lse T ra in D u ra t io n . C o n t ro l O f C o n d uc t io n M a y N o t B e M a in t a in e d . In it ia l TJ = 1 2 5 C 13000 N o V o lt a g e R e a p p lie d 12000 R a t e d V RRM R e a p p lie d 11000 10000 9000 8000 7000 ST 3 8 0 C ..C S e rie s 0.1 P u lse T ra in D u ra t io n (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled S T 3 8 0 C ..C Se rie s 10 1 00 6000 0.01 1 N um b e r O f E qua l Am p litude H alf C yc le C urre n t Pulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST380C..C Series Bulletin I25168 rev. C 04/00 1 0 0 00 In st a n ta n e o u s O n -st a te C u rre n t ( A ) TJ = 2 5 C T J = 1 2 5 C 1 0 00 S T3 8 0 C ..C S e rie s 10 0 0. 5 1 1 .5 2 2 .5 3 3 .5 In st a n t a n e o u s O n - sta t e V o lt a g e ( V ) Fig. 9 - On-state Voltage Drop Characteristics 0 .1 T ran sie n t T h e rm a l I m p e d an c e Z thJ-hs ( K/ W ) S T 3 8 0 C ..C Se rie s 0 .0 1 St e a d y St a t e V a lu e R thJ-hs = 0 .0 9 K / W ( Sin gle Sid e C o o le d ) R thJ-hs = 0 .0 4 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n ) 0. 00 1 0 .0 0 1 0 .0 1 0 .1 Sq u a re W a v e P u lse D u rat io n ( s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 In st an t a n e o u s G a t e V o lt ag e ( V ) R e c ta n gu la r g a te p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; tr< = 1 s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d di/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 s (b ) Tj=-40 C (1) (2) (3) (4) ( a) PG M PG M PG M PG M = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s Tj=2 5 C Tj=12 5 C 1 V GD IG D 0. 1 0 .0 0 1 0 .0 1 (1 ) (2 ) (3) (4) D e v ic e : ST 3 8 0 C ..C S e rie s 0 .1 1 F re q u e n c y L im ite d b y PG ( A V ) 10 1 00 In st a n t an e o us G a t e C urre n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7 |
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