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| Datasheet File OCR Text: |
| AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .REFRACTORY/ .EMI .LOW .I .OVERLAY .METAL/ .P DESCRIPTION PRELIMINARY DATA G OLD METALLIZATION T TER SITE BALLASTED THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY CERAMIC HERMETIC PACKAGE OUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-100 BRANDING 1214-100 PIN CONNECTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPACTM hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC 100C) 270 13.5 32 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.55 C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM1214-100 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCES ICES hFE IC = 50mA IE = 10mA IC = 100mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA VCE = 32V IC = 5A 65 3.5 65 -- 15 -- -- -- -- -- -- -- -- 20 -- V V V mA -- DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT c GP Note: f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = = 100Sec 10% PIN = 25W PIN = 25W PIN = 25W VCC = 28V VCC = 28V VCC = 28V 100 50 6.0 -- -- -- -- -- -- W % dB Pulse Width Duty Cycle PACKAGE MECHANICAL DATA 2/3 AM1214-100 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3 |
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