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| 2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features * Isolated package TO-126FM Outline 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC PC PC * Tj Tstg 1 2SD2491 160 160 5 100 1.35 8 150 -55 to +150 2SD2492 200 200 5 100 1.35 8 150 -55 to +150 Unit V V V mA W W C C Electrical Characteristics (Ta = 25C) 2SD2491 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD2492 Max -- -- -- 10 -- 320 -- 1.5 2 -- -- Min 200 200 5 -- -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 140 3.8 Max -- -- -- -- 10 320 -- 1.5 2 -- -- V V MHz pF Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0 f = 1 MHz Min 160 160 5 -- -- Typ -- -- -- -- -- -- -- -- -- 140 3.8 DC current transfer ratio hFE1* DC current transfer ratio hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 60 30 -- -- -- -- VCE(sat) Gain bandwidth product f T Collector output capacitance Note: B 60 to 120 Cob 1. The 2SD2491 and 2SD2492 are grouped by h FE1 and its specification is as follows. C 100 to 200 D 160 to 320 See characteristic curves of 2SD1609, 2SD1610. 2 2SD2491, 2SD2492 3 2SD2491, 2SD2492 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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