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| 2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 32 1 Features * Very low on-resistance * High speed switching * Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. 2, 4 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -12 7 2 4 2 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW < 100 s, duty cycle < 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7 mm). *** Marking is "NY". 2SJ317 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source cutoff current Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss ton toff Min -12 Typ -- Max -- Unit V Test conditions ID = -1 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 6.5 V, VDS = 0 VDS = -8 V, VGS = 0 ID = -100 A, VDS = -5 V ID = -0.5 A* VGS = -2.2 V ID = -1 A*, VGS = -4 V ID = -1 A*, VDS = -5 V VDS = -5 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 7 -- -- V -------------------------------------------------------------------------------------- -- -- 5 A -------------------------------------------------------------------------------------- Zero gate voltage drain current -- -- -1 A -------------------------------------------------------------------------------------- Gate to source cutoff voltage -0.4 -- -1.4 V -------------------------------------------------------------------------------------- Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance -- 0.4 0.7 -------------------------------------------------------------------------------------- -- 0.28 0.35 -------------------------------------------------------------------------------------- 1.0 2.3 -- S -------------------------------------------------------------------------------------- Input capcitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off delay time * Pulse test -- -- -- -- -- 63 180 23 500 2860 -- -- -- -- -- pF pF pF ns ns ID = -0.2 A*, Vin = -4 V, RL = 51 ------------------------------------------------------------------ ------------------------------------------------------------------ -------------------------------------------------------------------------------------- ------------------------------------------------------------------ -------------------------------------------------------------------------------------- 2SJ317 Maximun Power Dissipation Curve Channel Power Dissipation Pch (W) (on the aluminam ceramic board) 2.0 I D (A) Maximun Safe Operation Area -10 -3 D Operation in this Area is limited by RDS(on) PW = 1 ms 1 shot 1.5 -1 -0.3 -0.1 1.0 0.5 0 50 100 150 200 Ambient Temperature Ta (C) Typical Output Characteristics -5 -5 I D (A) -4 -4 -3 -2.5 Drain Current C O (T pe c= ra 25 tio C n ) -0.03 Ta = 25C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Forward Transfer Characteristics -5 Ta = -25C Pulse test -2 I D (A) -4 25C -3 75C -3 Drain Current -2 -1.5 Drain Current -2 -1 VGS = -1 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -1 VDS = -5 V Pulse test -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 0 2SJ317 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) VDS = -5 V Pulse test Drain to Source On State Resistance R DS(on) ( ) 20 10 5 Ta = -25C 2 1 0.5 0.2 -0.1 -0.2 75C 25C 10 Drain to Source on State Resistance vs. Drain Current Pulse test 5 2 VGS = -2 V 1 -3 V 0.5 0.2 0.1 -0.1 -0.2 -4 V -0.5 -1.0 -2 -5 Drain Current I D (A) -10 -0.5 -1.0 -2 -5 Drain Current I D (A) -10 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse test Drain to Source on State Resistance R DS(on) ( ) -0.5 1.0 Drain to Source on State Resintance vs. Case Temperature Pulse test -0.4 I D = -1 A -0.3 0.8 I D = -2 A 0.6 VGS = -2.5 V 0.4 I D = -2 A -1 A, -0.5A -1 A -0.5 A -0.2 -0.1 A -0.1 -0.5 A -0.2 A 0.2 0 -25 VGS = -4 V 0 -1 -2 -3 Gate to Source Voltage -4 V GS (V) -5 0 25 50 75 Case Temperature Tc (C) 100 4 2SJ317 Reverse Recovery Time vs. Reverse Drain Current 2000 Reverse Recovery Time trr (ns) 1000 500 Switching Time vs. Drain Current 2000 1000 t (ns) td(off) 500 tr tf Switching Time 200 100 50 di/dt = -10 A/s V GS = 0 VGS = -4 V 200 V DD = -10 V PW = 5 s Duty cycle = 1 % 100 td(on) 20 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Reverse Drain Current I DR (A) 50 -0.05 -0.1 -0.2 -0.5 -1 -2 Drain Current I D (A) -5 Dynamic Input Characteristics -25 Drain to Source Voltage V DS (V) Gate to Source Voltage VGS (V) V DD = -10 V I D = -2 A -20 Pulse test -15 VGS -10 1000 C (pF) 500 200 100 50 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz -8 Coss -6 -10 -4 Typical Capacitance Ciss Crss -5 VDS 0 2 4 Gate Charge 6 8 Qg (nc) -2 0 10 20 10 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 Drain to Source Voltage V DS (V) 5 2SJ317 Reverse Drain Current vs. Source to Drain Voltage -4 I DR (A) Pulse test -3 VGS = -4 V Reverse Drain Current -2 VGS = 0 V -1 -2.5 V 0 -0.5 -1.0 -1.5 -2.0 Source to Drain Voltage V SD (V) |
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