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| 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 3 2 4 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -20 20 -2 -4 -2 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is "RY". 2SJ361 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -20 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -16 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -0.5 -- -- -- -- 0.28 10 -10 -1.5 0.4 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -1 A VGS = -10 V ID = -0.4 A VGS = -2.5 V ID = -10 A VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz ID = -1 A VGS = -10 V RL = 10 ------------------------------------------------ -- 0.85 1.5 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.15 0.3 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 3.2 130 0.6 350 1650 7280 6950 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -2 A, VGS = 0 IF = -2 A, VGS = 0, diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 530 -- s -------------------------------------------------------------------------------------- 2SJ361 Power vs. Temperature Derating 2.0 Pch** (W) I D (A) -10 -3 -1 -0.3 -0.1 Maximum Safe Operation Area 10 1.5 PW 1 = 10 10 m 0 s s s Channel Dissipation 1.0 Drain Current m s D (1 (T C O sh c ot = per ) 25 at Operation in io C n this area is ) limited by R DS(on) 0.5 -0.03 Ta = 25 C -0.01 0 50 100 150 Ta (C) 200 -0.05 -0.1 -0.3 -1 -3 -10 -30 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -5 (A) -10 V -5 V I D (A) -4 -4 V -3.5 V Pulse Test ID -3 V Typical Transfer Characteristics -2.0 V DS = -10 V Pulse Test -1.6 -3 -1.2 Drain Current Drain Current -2 -0.8 -2.5 V -2 V VGS = -1.5 V 75 C 25 C Tc = -25 C -1 -0.4 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ361 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) -0.5 Static Drain to Source on State Resistance vs. Drain Current 5 3 Pulse Test -0.4 I D = -1 A -0.3 1 -2.5 V -4 V VGS = -10 V -0.2 -0.5 A -0.2 A 0.3 -0.1 0 -2 -4 -6 Gate to Source Voltage -10 V GS (V) -8 0.1 -0.1 -0.3 -1 Drain Current -3 I D (A) -10 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 1.6 -1 A Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 1 Forward Transfer Admittance vs. Drain Current 0.3 Tc = -25 C 25 C 75 C 1.2 VGS = -2.5 V -0.5 A -0.2 A 0.1 0.8 -4 V 0.4 0 -40 -10 V -1 A -0.5 A -0.2 A -1 A 0.3 -0.5 A I D = -0.2 A V DS = -10 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 0.01 -0.1 -0.3 -1 -3 Drain Current I D (A) -10 2SJ361 Body-Drain Diode Reverse Recovery Time 3000 Reverse Recovery Time trr (ns) Capacitance C (pF) 500 300 100 30 10 Typical Capacitance vs. Drain to Source Voltage Coss VGS = 0 f = 1 MHz di/dt = 20 A/s VGS = 0, Ta = 25 C 1000 Ciss 3 1 0.3 Crss 300 100 -0.1 0.1 -0.3 -1 Reverse Drain Current -3 -10 I DR (A) 0 -4 -8 -12 -16 -20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 0 V DS V DD = -10 V -20 V I D = -2 A 0 20 10 Switching Time t (s) Switching Characteristics t d(off) tf -20 -4 Drain to Source Voltage -40 -8 Gate to Source Voltage 3 tr 1 t d(on) 0.3 VGS = -10 V VDD = -10 V PW = 30 s duty < 1 % -60 V GS V DD = -10 V -20 V -12 -80 -16 -20 2.0 -100 0 0.4 0.8 1.2 1.6 Gate Charge Qg (nc) 0.1 -0.1 -0.3 -1 Drain Current -3 I D (A) -10 2SJ361 Reverse Drain Current vs. Source to Drain Voltage -5 Reverse Drain Current I DR (A) Pulse Test -4 -3 -10 V -5 V -2 -2.5 V -1 V GS = 0, 5 V 0 -0.2 -0.4 -0.6 -0.8 -1.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin 10 V 50 V DD = 10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
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