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| 2SJ387 L , 2SJ387 S Silicon P Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features * Low on-resistance * Low drive current * 2.5 V Gate drive device can be driven from 3 V Source * Suitable for Switching regulator, DC - DC converter 12 3 2, 4 12 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -20 10 -10 -40 -10 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25C 2SJ387 L , 2SJ387 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -20 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 200 A, VDS = 0 VGS = 6.5 V, VDS = 0 VDS = -16 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- -- -- -0.5 -- -- -- -- 0.05 10 -100 -1.5 0.07 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -5 A VGS = -4 V * ID = -5 A VGS = -2.5 V * ID = -5 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -5 A VGS = -4 V RL = 2 ------------------------------------------------ -- 0.07 0.1 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7 12 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1170 860 310 20 325 350 425 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -10 A, VGS = 0 IF = -10 A, VGS = 0, diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 240 -- s -------------------------------------------------------------------------------------- 2SJ387 L , 2SJ387 S Power vs. Temperature Derating 40 Pch (W) -100 I D (A) -30 -10 -3 Maximum Safe Operation Area 10 s 30 Channel Dissipation Drain Current DC PW Op =1 tio 100 s 1m s 0m s( 1s ho 20 era t) Operation in Tc =2 this area is 5 -1 limited by R DS(on) C) n( 10 -0.3 Ta = 25 C -0.1 -0.5 -1 -2 -5 -10 -20 -50 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (C) 200 Case Temperature Typical Output Characteristics -20 -10 V -5 V -4 V Pulse Test (A) -2.5 V -10 Typical Transfer Characteristics V DS = -10 V Pulse Test -8 I D (A) -16 -12 -2 V ID Drain Current -6 Drain Current -8 -4 Tc = -25 C 25 C 75 C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) -4 VGS = -1.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -2 0 2SJ387 L , 2SJ387 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) -0.5 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 -0.4 0.2 0.1 VGS = -2.5 V -4 V -0.3 I D = -5 A -0.2 -2 A -1 A 0 -2 -4 -6 Gate to Source Voltage -10 V GS (V) -8 0.05 0.02 0.01 -0.5 -0.1 -1 -2 -5 -10 -20 Drain Current I D (A) -50 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 Forward Transfer Admittance vs. Drain Current 50 20 Tc = -25 C 10 5 75 C 2 1 0.5 -0.1 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 25 C 0.12 I D = -5 A 0.08 VGS = -2.5 V -1, -2 A -5 A -1 A -2 A 0.04 0 -40 -4 V 0 40 80 120 160 Case Temperature Tc (C) 2SJ387 L , 2SJ387 S Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 10000 5000 Typical Capacitance vs. Drain to Source Voltage 200 100 50 2000 Ciss 1000 500 200 100 0 -10 -20 -30 Coss 20 10 -0.1 -0.3 -1 -3 -10 -30 -100 Reverse Drain Current I DR (A) di / dt = 20 A / s VGS = 0, Ta = 25 C Crss VGS = 0 f = 1 MHz -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = -5 V -10 V -15 V V DS V DD = -15 V 10 V 5V V GS V GS (V) 0 0 Switching Characteristics 1000 t d(off) 500 Switching Time t (ns) tf 200 tr 100 50 V GS = -4 V, V DD = -10 V PW = 5 s, duty < 1 % 20 10 -0.1 -0.3 t d(on) -1 -3 -10 -30 Drain Current I D (A) -100 -10 -4 Drain to Source Voltage -20 -8 -30 -12 -40 I = -10 A -50 D 0 80 20 40 60 Gate Charge Qg (nc) -16 -20 100 Gate to Source Voltage 2SJ387 L , 2SJ387 S Reverse Drain Current vs. Source to Drain Voltage -20 Pulse Test Reverse Drain Current I DR (A) -16 -5 V -12 -3 V V GS = 0, 5 V -8 -4 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 1 0.0 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SJ387 L , 2SJ387 S Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin -4 V 50 V DD = 10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
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