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| 2SK2084 L , 2SK2084 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * * * * 12 3 2, 4 12 3 1. 2. 3. 4. Gate Drain Source Drain 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 20 20 7 28 7 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2084 L , 2SK2084 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 20 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 16 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.04 10 100 2.5 0.053 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 4 A VGS = 10 V * ID = 4 A VGS = 4 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 5 ------------------------------------------------ -- 0.058 0.075 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 5 9 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 800 680 165 15 60 100 80 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 80 -- ns -------------------------------------------------------------------------------------- 2SK2084 L , 2SK2084 S Power vs. Temperature Derating 40 Pch (W) I D (A) 50 30 10 3 1 Maximum Safe Operation Area 10 s 100 s PW 30 Channel Dissipation 20 10 Drain Current s DC (1 (T O sh c = pe ot) Operation in ra 25 ti this area is on C limited by R DS(on) ) 10 ms = 1 m 0.3 Ta = 25 C 0 50 100 150 Ta (C) 200 0.1 0.3 1 3 Drain to Source Voltage 10 30 V DS (V) Ambient Temperature Typical Output Characteristics 20 10 V 6V 4V Pulse Test (A) 20 Typical Transfer Characteristics I D (A) 16 16 V DS = 10 V Pulse Test 3.5 V 12 ID Drain Current 3V 4 VGS = 2.5 V 12 Drain Current 8 8 Tc = 75 C 25 C -25 C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 2SK2084 L , 2SK2084 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.4 Drain to Source On State Resistance R DS(on) ( ) 0.5 0.2 Static Drain to Source State Resistance vs. Drain Current Pulse Test 0.1 V GS = 4 V 0.3 I D= 5 A 0.05 10 V 0.2 2A 1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.1 0.02 0.01 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 20 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.16 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = -25 C 25 C 75 C V DS = 10 V Pulse Test 0.12 V GS = 4 V 5A 1A 2A 1A 2A 5A 0.08 2 1 0.5 0.1 0.04 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.5 1 2 5 10 Drain Current I D (A) 2SK2084 L , 2SK2084 S Body-Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 10000 100 Capacitance C (pF) 1000 Ciss Coss 50 di / dt = 20 A / s V GS = 0, Ta = 25 C 100 Crss VGS = 0 f = 1 MHz 20 10 0.1 10 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 0 4 8 12 16 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 50 20 200 Switching Characteristics t d(off) Switching Time t (ns) 100 tf V GS = 10 V V DD = 20 V PW = 5 s duty < 1 % tr t d(on) 40 Drain to Source Voltage 30 VDS ID = 7 A 8 Gate to Source Voltage V DD = 20 V 10 V 5V VGS 16 50 20 4 10 V DD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 2 0 40 20 0 10 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 2SK2084 L , 2SK2084 S Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 10 V 5V 12 V GS = 0, -5 V 8 4 0 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2084 L , 2SK2084 S Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 20 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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