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| 2SK2529 Silicon N Channel MOS FET Application High speed power switching TO-220CFM Features * Low on-resistance RDS(on) = 7 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V souece 2 1 12 3 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings 60 20 50 200 50 45 174 35 150 -55 to +150 Unit V V A A A A mJ W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25C *** Value at Tch = 25C, Rg 50 2SK2529 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 7 10 10 2.0 10 A A V m -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 25 A VGS = 10 V * ID = 25 A VGS = 4 V * ID = 25 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS = 10 V RL = 1.2 ------------------------------------------------ -- 10 16 m -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr 35 55 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 3550 1760 500 35 230 470 360 0.85 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- VDF trr tf td(off) -------------------------------------------------------------------------------------- -- 145 -- ns -------------------------------------------------------------------------------------- 2SK2529 Power vs. Temperature Derating 40 Pch (W) I D (A) 500 200 100 50 Maximum Safe Operation Area 10 10 PW C D s 30 0 s m s = 1 10 m Channel Dissipation Drain Current s sh 20 20 10 5 2 (1 Operation in this area is limited by R DS(on) O pe tio ra n c (T ot ) = 10 0 50 100 150 Tc (C) 200 Case Temperature 1 Ta = 25 C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) 25 C ) 100 Typical Output Characteristics 10 V 6 V 5V Pulse Test 3.5 V Typical Transfer Characteristics 100 V DS = 10 V Pulse Test I D (A) 80 ID 3V Drain Current (A) 4V 80 60 60 Drain Current 40 40 25C Tc = 75C 20 -25C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 20 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 0 2SK2529 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 1.0 Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 Pulse Test 0.8 Drain to Source Voltage 0.6 I D = 50 A VGS = 4 V 10 V 0.4 0.005 0.002 0.001 0.2 20 A 10 A 6 2 4 Gate to Source Voltage 8 V GS (V) 10 0.0005 0 1 3 10 30 100 300 Drain Current I D (A) 1000 Static Drain to Source on State Resistance R DS(on) ( ) 0.04 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.032 Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 75 C 25 C Tc = -25 C V DS = 10 V Pulse Test 0.024 I D = 50 A 10, 20 A V GS = 4 V 10, 20, 50 A 10 V 0.016 0.008 0 -40 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2529 Body-Drain Diode Reverse Recovery Time 5000 Reverse Recovery Time trr (ns) 2000 Typical Capacitance vs. Drain to Source Voltage 10000 5000 Capacitance C (pF) 1000 500 200 100 50 20 10 5 0.1 di / dt = 50 A / s V GS = 0, Ta = 25 C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Ciss 2000 1000 500 Coss Crss 200 100 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 50 A V GS (V) 100 20 Switching Characteristics 5000 2000 Switching Time t (ns) 1000 500 200 100 50 20 10 5 0.1 0.3 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 1 3 Drain Current 10 30 I D (A) 100 t d(off) tf tr t d(on) 80 V DD = 10 V 25 V 50 V V GS 16 Drain to Source Voltage 60 V DS 12 40 8 20 V DD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) 4 0 200 0 Gate to Source Voltage 2SK2529 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Pulse Test 80 10 V 5V V GS = 0, -5 V Repetive Avalanche Energy E AR (mJ) 100 200 Maximun Avalanche Energy vs. Channel Temperature Derating I AP = 45 A V DD = 25 V duty < 0.1 % Rg > 50 160 60 120 40 80 20 40 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 ch - c(t) = s (t) * ch - c ch - c = 3.57 C/W, Tc = 25 C PDM D= PW T 0.03 PW T 0.01 10 1s h p ot uls e 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2529 Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 2SK2529 Package Dimensions Unit : mm * TO-220CFM 10.0 0.3 3.2 0.2 2.7 0.2 0.6 0.1 2.54 0.5 2.54 0.5 4.1 0.3 2.5 0.2 0.7 0.1 Hitachi Code TO-220CFM -- EIAJ -- JEDEC 13.6 1.0 1.0 0.2 1.15 0.2 12.0 0.3 4.45 0.3 15.0 0.3 |
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