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| 2SK2568 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter S 2 1 G 1 3 D 2 3 1. Gate 2. Source (Flange) 3. Drain Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID** ID(pulse)* IDR** Pch** Tch Tstg Ratings 500 30 12 48 12 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25C 2SK2568 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) Min 500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V * ID = 6 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.5 10 250 3.0 0.6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 6.0 10 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall tiem Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- (1560) (450) (72) (22) (78) (140) (60) (1.1) -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 12 A, VGS = 0 IF = 12 A, VGS = 0 diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- VDF trr tf td(off) tr -------------------------------------------------------------------------------------- -- (105) -- ns -------------------------------------------------------------------------------------- 2SK2568 Power vs. Temperature Derating 200 Pch (W) Channel Dissipation 150 100 50 0 50 100 150 Tc (C) 200 Case Temperature |
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