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| 2SK2569 Silicon N Channel MOS FET Application Low frequency power switching MPAK 3 Features * Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100mA) * 2.5V gate drive device. * Small package (MPAK). D 3 1 2 2 G 1. Source 2. Gate 3. Drain S 1 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch** Tch Tstg Ratings 50 20 0.2 0.4 150 150 -55 to +150 Unit V V A A mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % 2SK2569 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Foward transfer admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss td(on) Min 50 Typ -- Max -- Unit V Test conditions ID = 100 A, VGS = 0 IG = 100 A, VDS = 0 VDS = 40 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 10 A, VDS = 5 V ID = -100 mA VGS = -4 V * ID = 40 mA VGS = -2.5 V * ID = 100 mA VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 100 mA RL = 300 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 0.5 -- -- -- -- 2.0 1.0 2.0 1.5 2.6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 3.1 5.0 -------------------------------------------------------------------------------------- 0.13 0.23 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay tiem Fall time * Pulse Test Marking is "ZN-" -- -- -- -- -- -- -- 14.0 17.2 1.73 40 86 1120 430 -- -- -- -- -- -- -- pF pF pF s s s s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- tr td(off) tf ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK2569 Maximum Channel Dissipation Curve 200 Pch (mW) Channel Dissipation 150 100 50 0 50 100 150 Ta (C) 200 Ambient Temperature Package Dimensions Unit : mm * MPAK 0.65 - 0.3 + 0.1 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 2.8 - 0.6 + 0.2 0.95 1.9 0.95 + 0.3 2.8 - 0.1 0.3 0.65 - 0.3 + 0.1 1.5 0 ~ 0.15 1.1- 0.1 + 0.2 Hitachi Code EIAJ JEDEC MPAK SC-59A -- |
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