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| BCY79 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY79 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are designed for use in audio driver and low-noise input stages. The complementary NPN type is the BCY59. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T amb 25 C o at T case 45 C St orage Temperature Max. Operating Junction Temperature o Value -45 -45 -5 -200 -20 390 1 -65 to 150 150 Unit V V V mA mA mW W o o C C 1/6 November 1997 BCY79 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 150 450 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (V BE = -2V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = -35 V V CE = -45 V V CE = -35 V V CE = -45 V V EB = -4 V I C = -10 A -45 Min. Typ . -2 T amb = 150 C T amb = 100 o C o Max. -20 -100 -10 -20 -20 Un it nA nA A A nA V I CEX I EBO V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter O n Voltage I C = -2 mA -45 V I E = -1 A -5 V V CE(sat ) V BE(s at) V BE(on) I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA IC IC IC IC = = = = -10 A -2 mA -10 mA -100 mA I B = -0.25 mA IB = -2.5 mA I B = -0.25 mA IB = -2.5 mA V CE VCE V CE V CE = -5 V = -5 V = -1 V = -1 V -0.6 -0.7 -0.6 -0.12 -0.4 -0.7 -0.85 -0.55 -0.65 -0.68 -0.75 140 200 270 170 250 350 180 260 360 -0.25 -0.8 -0.85 -1.2 -0.75 V V V V V V V V h FE DC Current G ain I C = -10 A Gr. VII Gr. VIII Gr. IX I C = -2 mA Gr. VII Gr. VIII Gr. IX I C = -10 mA Gr. VII Gr. VIII Gr. IX I C = -100 mA Gr. VII Gr. VIII Gr. IX I C = -2 mA Gr. VII Gr. VIII Gr. IX V CE = -5 V 30 40 VCE = -5 V 120 180 250 V CE = -1 V 80 120 160 V CE = -1 V 40 45 60 V CE = -5 V f = 1KHz 125 175 250 200 260 330 250 350 500 400 630 220 310 460 h fe Small Signal Current Gain Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/6 BCY79 ELECTRICAL CHARACTERISTICS (continued) Symb ol fT C EBO C CBO NF h ie Parameter Transition F requency Emitter Base Capacitance Collector Base Capacitance Noise Figure Input Impedance Test Cond ition s I C = -10 mA V CE = -5 V f = 100 MHz IC = 0 IE = 0 V EB = -0.5 V VCB = -10 V f = 1MHz f = 1MHz Min. Typ . 180 11 4.5 2 f = 1KHz 2.7 3.6 4.5 V CE = -5 V f = 1KHz 1.5 2 2 V CE = -5 V f = 1KHz 18 24 30 I B1 = -1 mA IB1 = -10 mA I B1 = -1 mA IB1 = -10 mA I B1 = -I B2 = 1 mA IB1 = -I B2 = 10 mA I B1 = -I B2 = 1 mA IB1 = -I B2 = 10 mA I B1 = -1 mA IB1 = -10 mA I B1 = -I B2 = 1 mA IB1 = -I B2 = 10 mA 35 5 50 50 400 250 80 200 85 55 480 450 150 150 800 800 30 50 60 K K K 10 -4 10 -4 10 S S S ns ns ns ns ns ns ns ns ns ns ns ns -4 Max. Un it MHz 15 7 6 pF pF dB I C = -0.2mA V CE = -5 V f = 1KHz R g = 2K I C = -2 mA Gr. VII Gr. VIII Gr. IX I C = -2 mA Gr. VII Gr. VIII Gr. IX I C = -2 mA Gr. VII Gr. VIII Gr. IX V CC = -10 V I C = -10 mA I C = -100 mA V CC = -10 V I C = -10 mA I C = -100 mA V CC = -10 V I C = -10 mA I C = -100 mA V CC = -10 V I C = -10 mA I C = -100 mA V CC = -10 V I C = -10 mA I C = -100 mA V CC = -10 V I C = -10 mA I C = -100 mA V CE = -5 V hre Reverse Voltage Ratio h oe Output Admittance td Delay Time tr Rise Time ts Storage Time tf Fall T ime t on Turn-on T ime t of f Turn-off T ime Pulsed: Pulse duration = 300 s, duty cycle 1 % 3/6 BCY79 Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage. DC Current Gain. Normalized h Parameters. Noise Figure vs. Frequency. Noise Figure (f = 1 kHz). 4/6 BCY79 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/6 BCY79 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6 |
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